用于量子电路的蓝宝石衬底超导通孔

Kiyotaka Mukasa;Yusuke Nuruki;Hayato Kubo;Yoshihide Narahara;Motohiro Umehara;Kazuyuki Fujie
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引用次数: 0

摘要

蓝宝石衬底最近被认为具有改善超导量子比特相干时间的潜力。然而,由于通孔制作方面的挑战,硅衬底一直是量子比特的主要使用材料。在这项研究中,我们利用激光在蓝宝石基底上制作了通孔,并通过化学气相沉积沉积了 TiN 薄膜。通孔的横截面图证实,TiN 薄膜沿通孔壁的厚度均匀一致。此外,TiN 薄膜在 4.5 K 时出现了超导转变,证明成功沉积了高质量的均匀超导薄膜。这是在蓝宝石衬底上实现超导通孔的首个实例,是实现量子位三维集成并保持相干时间的关键第一步。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Superconducting Through-Substrate Vias on Sapphire Substrates for Quantum Circuits
Sapphire substrates have recently been recognized for their potential to improve the coherence time of superconducting qubits. However, due to challenges in via fabrication, silicon substrates have been predominantly used for qubits. In this study, we fabricated vias on sapphire substrates using lasers and deposited TiN films by chemical vapor deposition. Cross-sectional views of the via confirmed uniform thickness of the TiN film along the via wall. In addition, the TiN film exhibited a superconducting transition at 4.5 K, demonstrating the successful deposition of a high-quality homogeneous superconducting film. This represents the first example of realizing superconducting through-substrate vias on sapphire substrates, a crucial first step toward achieving the 3-D integration of qubits while maintaining coherence time.
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