质子单次事件对 8T 全局曝光 CMOS 图像传感器的影响

IF 1.3 4区物理与天体物理 Q3 NUCLEAR SCIENCE & TECHNOLOGY

Radiation Effects and Defects in Solids Pub Date : 2024-06-28 DOI:10.1080/10420150.2024.2340580

Yi-Hao Cui, Jie Feng, Yu-Dong Li, Lin Wen, Bing-Kai Liu, Zhi-Kang Yang, Qi Guo

引用次数: 0

摘要

光学有效载荷中的 CMOS 图像传感器在受到来自空间辐射环境的高能质子照射时容易受到单次事件效应的影响。图像中的单次瞬态现象主要是由于...

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proton single event effects on 8T global exposure CMOS image sensors

CMOS image sensors in optical payloads are susceptible to single-event effects when irradiated by high-energy protons from the spatial radiation environment. Single-event transients in images prima...

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来源期刊

Radiation Effects and Defects in Solids 物理-核科学技术

CiteScore

1.60

自引率

20.00%

发文量

107

审稿时长

4 months

期刊介绍： The Journal covers a wide range of topics under radiation and plasma sciences. The range of contributions encompasses: radiation physics; radiochemistry, radiobiology and physical effects of medical irradiation, including research on radiative cell degeneration; optical, electrical and mechanical effects of radiation, and their secondary effects such as diffusion and particle emission from surfaces; plasma techniques and plasma phenomena. On plasma science the Journal covers all areas of fusion, space and low temperature plasmas.