A. Meléndez-Sans, V. M. Pereira, C. F. Chang, C.-Y. Kuo, C. T. Chen, L. H. Tjeng, S. G. Altendorf
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引用次数: 0
摘要
我们报告了在慢生长条件下通过分子束外延在 LaAlO3 (100) 上合成 SmN 外延薄膜的综合研究。通过仔细调节衬底温度和分子氮分压,我们能够控制样品中的氮含量,并制备出接近原子序数的有序 SmN 薄膜。我们通过 X 射线吸收和光电子能谱研究了氮缺陷对钐离子价态和电子结构的影响,结果表明空的 Sm 5d 态可能充当了电荷库,稳定了缺氮化合物中的 4f5 构型。光谱还揭示了 Sm 4f 和 N 2p 态的显著杂化。
Influence of nitrogen stoichiometry and the role of Sm 5d states in SmN thin films
We report a comprehensive study of the synthesis of epitaxial SmN thin films on (100) by molecular beam epitaxy under slow-growth conditions. By carefully tuning the substrate temperature and the molecular nitrogen partial pressure, we are able to control the nitrogen content of our samples and produce near-stoichiometric, well-ordered SmN thin films. The influence of nitrogen defects on the samarium ion valence and the electronic structure is investigated by x-ray absorption and photoelectron spectroscopy, suggesting that the empty Sm states may act as a charge reservoir stabilizing the configuration in the nitrogen-deficient compound. The spectra also reveal a significant hybridization of the Sm and N states.
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