采用磁控溅射共蒸发模式在带有 Al2O3/Y2O3/MgO/LaMnO3 缓冲层的 Hastelloy-C276 磁带上合成 MgB2 薄膜

I V Yanilkin, A I Gumarov, I A Rudnev, L R Fatikhova, A G Kiiamov, A E Denisov, S A Khokhorin, D A Tayurskii and R G Batulin
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引用次数: 0

摘要

本研究介绍了在涂有 Al2O3/Y2O3/MgO/LaMnO3 缓冲层的 Hastelloy®-C276TM 基材上合成柔性超导二硼化镁复合材料的技术开发的初步成果。超导复合材料是通过磁控溅射从两个镁和硼靶上沉积下来的,然后在 400 °C 至 700 °C 的不同基底温度下进行真空退火。在最佳退火温度 400 ℃ 时,超导转变温度 Tc ≈ 22 K,转变宽度 ΔT ≈ 1 K,临界电流 Jc ≈ 500 kA cm-2(T= 5 K,H = 2 T),Jc ≈ 11 kA cm-2(T= 15 K,H = 2 T)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis of MgB2 films on Hastelloy-C276 tape with Al2O3/Y2O3/MgO/LaMnO3 buffer layers by magnetron sputtering in co-evaporation mode
This study presents the initial results of developing a technology for synthesizing a flexible superconducting magnesium diboride composite on a Hastelloy®-C276TM substrate coated with Al2O3/Y2O3/MgO/LaMnO3 buffer layers. The superconducting composite was deposited by magnetron sputtering from two Mg and B targets, followed by vacuum annealing at various substrate temperatures ranging from 400 °C to 700 °C. The superconducting transition temperature Tc ≈ 22 K, with a transition width ΔT ≈ 1 K, and critical current Jc ≈ 500 kA cm−2 (T= 5 K, H = 2 T) and Jc ≈ 11 kA cm−2 (T = 15 K, H = 2 T) at the optimal annealing temperature of 400 °C.
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