低温等离子体中使用的前驱体分子的弹性截面数据:Sn(CH3)4 和 Ga(CH3)3

Pedro A S Randi, Giseli M Moreira and Márcio H F Bettega
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引用次数: 0

摘要

四甲基锡[Sn(CH3)4]和三甲基镓[Ga(CH3)3]是涉及低温等离子体的制造技术中使用的重要的锡和镓原子源分子。要对等离子体环境进行精确的数值建模,就必须全面了解这些前驱体分子的电子散射截面。在此,我们报告了电子与 Sn(CH3)4 和 Ga(CH3)3 碰撞的弹性积分、微分和动量传递截面,能量范围为 0 至 30 eV。我们的计算采用了施文格多通道方法,并在计算中考虑了两种近似水平,即静态交换和静态交换加极化。我们发现 Sn(CH3)4 有三个形状共振,Ga(CH3)3 有一个明显的低洼共振。 我们研究了 s 波截面和特征相的低能行为,发现这两种分子都存在拉姆绍尔-唐森德(RT)最小值和虚态。我们的研究结果表明,在由 Sn(CH3)4 组成的气体中会出现负差分电导率;另一方面,在由 Ga(CH3)3 组成的气体中,由于 RT 最小值的位置与动量传递截面中的形状共振重叠,这种效应会被抑制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH3)4 and Ga(CH3)3
Tetramethyltin [Sn(CH3)4] and trimethylgallium [Ga(CH3)3] are important source molecules of Sn and Ga atoms which are used in manufacturing techniques involving low-temperature plasmas. Accurate numerical modeling of plasma environments requires a comprehensive set of electron scattering cross sections by these precursor molecules. Here, we report the elastic integral, differential, and momentum transfer cross sections for electron collisions with Sn(CH3)4 and Ga(CH3)3 for energies ranging from 0 to 30 eV. Our calculations were carried out with the Schwinger multichannel method implemented with pseudopotentials and considered two levels of approximation in our calculations, namely static-exchange and static-exchange plus polarization. We identified three shape resonances for Sn(CH3)4 and one clear low-lying resonance for Ga(CH3)3. The low-energy behavior of the s-wave cross section and eigenphase was investigated and, for both molecules, we found evidence of a Ramsauer–Townsend (RT) minimum and a virtual state. Our results indicate that negative differential conductivity would occur in a gas composed of Sn(CH3)4. On the other hand, this effect would be suppressed in a gas of Ga(CH3)3 due to an overlap between the position of the RT minimum and the shape resonance in the momentum-transfer cross section.
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