基于氮化镓的双金属圆柱环绕栅极无结累积模式 (DM-CSG-JAM) MOSFET 的小信号参数提取和射频性能

IF 1.3 4区计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IETE Journal of Research Pub Date : 2024-06-18 DOI:10.1080/03772063.2024.2358148

Sumedha Gupta, Neeta Pandey, R.S. Gupta

引用次数: 0

摘要

本文提取了基于氮化镓的双金属圆柱环绕栅极无结累积模式（DM-CSG-JAM）MOSFET 的小信号模型参数和射频特性。B...

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Small Signal Parameters Extraction and RF Performance of GaN-Based Dual-Metal Cylindrical Surrounding Gate Junctionless Accumulation-Mode (DM-CSG-JAM) MOSFET

In this paper, small-signal model parameters and RF characteristics of the GaN-based Dual-Metal Cylindrical Surrounding Gate-Junctionless Accumulation Mode (DM-CSG-JAM) MOSFET has been extracted. B...

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来源期刊

IETE Journal of Research 工程技术-电信学

CiteScore

3.30

自引率

6.70%

发文量

308

期刊介绍： IETE Journal of Research is a Bimonthly journal published by the Institution of Electronics and Telecommunication Engineers (IETE), India. It publishes scientific and technical papers describing original research work or novel product/process development. Occasionally special issues are brought out on new and emerging research areas. IETE Journal of Research is useful to researchers, engineers, scientists, teachers, managers and students who are interested in keeping a track of original research and development work being carried out in the broad area of electronics, telecommunications, computer science and engineering and information technology.