烧结工艺参数对 W-Cu 复合材料腐蚀、磨损和硬度影响的研究

Ehsan Selahshorrad, Seyyed Amirhossein Alavi, Karim Zangeneh-Madar, Mohammad Reza Samadi, Morteza Yazdanshenas, Mahmoud Afshari
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引用次数: 0

摘要

本研究采用烧结工艺制作了钨-铜(W-Cu)复合材料,在 1050、1150 和 1300 °C 三种不同温度下检测了所制样品的腐蚀、磨损和硬度。在含有不同苯并三唑抑制剂的 3.5% 氯化钠溶液中,对复合材料样品的电位极化行为进行了评估。最后,通过 SEM、TEM、XRD 和 EDS 分析检测了 W-Cu 复合材料的微观结构。碾磨样品的 XRD 结果表明,最佳条件是球粉比为 16:1,碾磨时间为 15 小时,从而获得尺寸为 16.76 nm 的晶体。此外,在 1300 °C 下烧结的样品硬度最高(185 HV),相对密度最高(97.34%)。随着磨损力的增加,机械混合层中的加工硬化增加,导致磨损率上升,摩擦系数下降。复合材料的腐蚀行为表明,在腐蚀溶液中加入 200 ppm 的抑制剂后,腐蚀电流密度从 3.73 μA/cm2 降至 0.59 μA/cm2,腐蚀电位从 - 630.46 mVSCE 降至 - 336.28 mVSCE。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Investigation of the effect of sintering process parameters on the corrosion, wear and hardness of W–Cu composite

Investigation of the effect of sintering process parameters on the corrosion, wear and hardness of W–Cu composite

In this study, tungsten–copper (W–Cu) composite was fabricated using the sintering process to examine the corrosion, wear and hardness of the fabricated samples at three different temperatures of 1050, 1150 and 1300 °C. The potentiodynamic polarization behavior of the composite samples was evaluated in 3.5% NaCl solution containing different benzotriazole inhibitors. Finally, the microstructure of the W–Cu composite was examined by SEM, TEM, XRD and EDS analyses. The XRD results on the milled samples showed that the optimal conditions were obtained with a ball to powder ratio of 16:1 and a milling time of 15 h, so that the crystals with a size of 16.76 nm were obtained. Also, the highest hardness (185 HV) and relative density (97.34%) were obtained in the samples sintered at 1300 °C. With increasing the wear force, the work hardening increased in the mechanically mixed layer, which led to a rise in the wear rate and a decrease in the friction coefficient. The corrosion behavior of the composite indicated that by addition of 200 ppm inhibitor in the corrosion solution, the corrosion current density decreased from 3.73 to 0.59 μA/cm2 and the corrosion potential improved from − 630.46 to − 336.28 mVSCE.

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