Antiferromagnetic spintronics and beyond

In this review article, we summarize some recent key results in the development of antiferromagnetic spintronics. Current-induced switching of the Néel vector orientation has now been established in a wide range of antiferromagnetic films and antiferromagnet / heavy metal bilayers, as well as current-driven motion of antiferromagnetic spin textures. The latter are particularly promising due to their small size and topological stability, but reading their magnetic state presents challenges. We also focus on materials whose compensated spin arrangements (either collinear or noncollinear) are coexistent with a spin-split band structure, enabling first-order spintronic phenomena including giant and tunneling magnetoresistance, and the anomalous Hall effect. The resulting combination of efficient electrical readout mechanisms with the advantages of a near-zero net magnetization has potential to be transformative for spintronic applications.