Peidong Liu, Zechen Hu, Yang Yang, Huimin Li, Xiangyu Li, Ziyang Sun, Jinwei Guo, Deren Yang and Xuegong Yu
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Based on it, 300 mm diameter n-type recharged Cz-Si (RCz-Si) crystals with an oxygen concentration in the range of 9.5–10.5 ppma were grown in on-site experiments, which is much lower than that grown in a conventional heating zone structure. More importantly, the photoluminescence (PL) images of the quarter wafers taken at the as-grown Cz-Si crystal head, middle and bottom have shown that little metastable defects can be annealed out during typical high-temperature oxidation at 1000 °C, confirming the excellent stability of thermally induced degradation. Consequently, this manuscript has demonstrated that the proposed crystal growth technique can realize dual goals of oxygen concentration control and crystal quality assurance in 300 mm diameter n-type Cz-Si crystal growth, which may promote the development of large diameter Cz-Si crystal growth techniques and the related application industries.</p>","PeriodicalId":70,"journal":{"name":"CrystEngComm","volume":" 29","pages":" 3920-3928"},"PeriodicalIF":2.6000,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters†\",\"authors\":\"Peidong Liu, Zechen Hu, Yang Yang, Huimin Li, Xiangyu Li, Ziyang Sun, Jinwei Guo, Deren Yang and Xuegong Yu\",\"doi\":\"10.1039/D4CE00363B\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >In recent years, Czochralski silicon (Cz-Si) crystals have been progressing toward n-type, large diameter and low oxygen concentration. For this purpose, the modified heating zone structure for 300 mm diameter n-type Cz-Si crystal growth with dual side-heaters has been proposed; moreover, its feasibility and effectiveness were verified through numerical simulations and on-site experiments herein. The simulation results indicate that the proposed crystal growth technique with modified parameters can effectively enhance the uniformity of longitudinal temperature gradient in the silicon melt and lower the temperature at the silica crucible bottom, for reducing the oxygen concentration at the crystal head. Based on it, 300 mm diameter n-type recharged Cz-Si (RCz-Si) crystals with an oxygen concentration in the range of 9.5–10.5 ppma were grown in on-site experiments, which is much lower than that grown in a conventional heating zone structure. More importantly, the photoluminescence (PL) images of the quarter wafers taken at the as-grown Cz-Si crystal head, middle and bottom have shown that little metastable defects can be annealed out during typical high-temperature oxidation at 1000 °C, confirming the excellent stability of thermally induced degradation. 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引用次数: 0
摘要
近年来,Czochralski 硅(Cz-Si)晶体正朝着 n 型、大直径和低氧浓度方向发展。为此,我们提出了采用双侧加热器的 300 毫米直径 n 型 Cz-Si 晶体生长的改良加热区结构,并通过数值模拟和现场实验验证了其可行性和有效性。模拟结果表明,改进参数后的晶体生长技术可有效提高硅熔体纵向温度梯度的均匀性,降低硅坩埚底部的温度,从而降低晶体头部的氧浓度。在此基础上,在现场实验中生长出了直径为 300 毫米的 n 型充电氮化硅(RCz-Si)晶体,其氧浓度范围为 9.5-10.5 ppma,远低于在传统加热区结构中生长的氧浓度。更重要的是,在生长的 Cz-Si 晶体头部、中部和底部拍摄的四分之一晶圆的光致发光(PL)图像显示,在 1000 °C 的典型高温氧化过程中,几乎没有可退火缺陷,这证实了热诱导降解的出色稳定性。因此,本手稿证明了所提出的晶体生长技术可在直径为 300 毫米的 n 型氮化硅晶体生长中实现氧浓度控制和晶体质量保证的双重目标,从而可促进大直径氮化硅晶体生长技术和相关应用产业的发展。
Reduction of oxygen concentration in 300 mm diameter n-type Czochralski silicon crystal growth using an optimized heating zone with dual side-heaters†
In recent years, Czochralski silicon (Cz-Si) crystals have been progressing toward n-type, large diameter and low oxygen concentration. For this purpose, the modified heating zone structure for 300 mm diameter n-type Cz-Si crystal growth with dual side-heaters has been proposed; moreover, its feasibility and effectiveness were verified through numerical simulations and on-site experiments herein. The simulation results indicate that the proposed crystal growth technique with modified parameters can effectively enhance the uniformity of longitudinal temperature gradient in the silicon melt and lower the temperature at the silica crucible bottom, for reducing the oxygen concentration at the crystal head. Based on it, 300 mm diameter n-type recharged Cz-Si (RCz-Si) crystals with an oxygen concentration in the range of 9.5–10.5 ppma were grown in on-site experiments, which is much lower than that grown in a conventional heating zone structure. More importantly, the photoluminescence (PL) images of the quarter wafers taken at the as-grown Cz-Si crystal head, middle and bottom have shown that little metastable defects can be annealed out during typical high-temperature oxidation at 1000 °C, confirming the excellent stability of thermally induced degradation. Consequently, this manuscript has demonstrated that the proposed crystal growth technique can realize dual goals of oxygen concentration control and crystal quality assurance in 300 mm diameter n-type Cz-Si crystal growth, which may promote the development of large diameter Cz-Si crystal growth techniques and the related application industries.