用于 SRF 的铌中温焙烧原位同步辐射 X 射线光电子能谱研究

A Prudnikava, Y Tamashevich, A Makarova, D Smirnov, J Knobloch
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引用次数: 0

摘要

为了确定超导射频铌腔真空热处理的最佳参数,需要详尽了解铌的初始化学状态及其在真空热处理后的变化情况。在本研究中,通过同步辐射 X 射线光电子能谱 (XPS) 实地考察了铌在 200 ∘C-400 ∘C 超高真空烘烤(类似于空腔的 "中温烘烤 "和 "熔炉烘烤")后表面的化学成分。我们的研究结果表明,在 Nb2O5 层的临界厚度(≈1 纳米)以下,铌开始与碳和磷等表面杂质发生积极的相互作用。通过研究原生氧化物还原的动力学,确定了活化能和速率常数关系,并用于计算氧浓度深度曲线。结果表明,在温度为 200 ℃-300 ℃ 时,氧气的扩散是受控的,本生氧化物层是氧源,而在 400 ℃ 时,五氧化物完全还原,掺杂水平由环境氧分压决定。在缓冲化学抛光后,发现氟(F 与 Nb 的原子比为 0.2)被纳入 XPS 探测的表面层(≈4.6nm),其浓度在低温烘烤期间增加(230 ℃ 时 F/Nb = 0.35),在较高温度下减少(400 ℃ 时 F/Nb = 0.11)。因此,必须考虑氟对中 T 烘烤、掺氮,特别是温和烘烤(120 ∘C/48 h)型腔性能的影响。此外,还讨论了氟在室温下和热处理过程中受 X 射线束影响的 Nb+5→Nb+4 反应中可能发挥的作用。确定了铌表面不会受到杂质污染的热处理温度范围和持续时间参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
In-situ synchrotron x-ray photoelectron spectroscopy study of medium-temperature baking of niobium for SRF application
In order to determine optimal parameters of vacuum thermal processing of superconducting radiofrequency niobium cavities exhaustive information on the initial chemical state of niobium and its modification upon a vacuum heat treatment is required. In the present work the chemical composition of the niobium surface upon ultra-high vacuum baking at 200 C–400 C similar to ‘medium-temperature baking’ and ‘furnace baking’ of cavities is explored in-situ by synchrotron x-ray photoelectron spectroscopy (XPS). Our findings imply that below the critical thickness of the Nb2O5 layer ( 1nm ) niobium starts to interact actively with surface impurities, such as carbon and phosphorus. By studying the kinetics of the native oxide reduction, the activation energy and the rate-constant relation have been determined and used for the calculation of the oxygen-concentration depth profiles. It has been established that the controlled diffusion of oxygen is realized at temperatures 200 C–300 C, and the native-oxide layer represents an oxygen source, while at 400 C the pentoxide is completely reduced and the doping level is determined by an ambient oxygen partial pressure. Fluorine (F to Nb atomic ratio is 0.2) after the buffered chemical polishing was found to be incorporated into the surface layer probed by XPS ( 4.6nm ), and its concentration increased during the low-temperature baking (F/Nb = 0.35 at 230 C) and depleted at higher temperatures (F/Nb = 0.11 at 400 C). Thus, the influence of fluorine on the performance of mid-T baked, nitrogen-doped and particularly mild-baked (120 C/48 h) cavities must be considered. The possible role of fluorine in the educed Nb+5Nb+4 reaction under the impact of an x-ray beam at room temperature and during the thermal treatment is also discussed. The range of temperature and duration parameters of the thermal treatment at which the niobium surface would not be contaminated with impurities is determined.
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