从 Floquet 准能谱预测之字形石墨烯纳米带中的边缘定位单芳缺陷

Gulshan Kumar, Shashikant Kumar, Ajay Kumar, Prakash Parida
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引用次数: 0

摘要

在这项工作中,我们提出了一个理论框架,旨在利用 Floquet-Bloch 形式主义预测人字形石墨烯纳米带(ZGNR)边缘单芳缺陷的位置,并可通过时间和角度分辨光发射光谱(tr-ARPES)进行实验观察。我们的方法包括深入研究受不同频率偏振光影响的 Floquet 准能带谱。特别是在频率与系统带宽相当的圆偏振光的影响下,我们的发现为定位任一边缘的单芳缺陷提供了一种很有前景的方法,而这一挑战却很难从具有单芳缺陷的 ZGNR 的 ARPES 光谱中预测出来。我们通过分析费米级附近的浮凸边缘态取向和新的狄拉克点的出现实现了这一目标。这些迷人特性在现实世界中的应用强调了我们理论框架的重要性和相关性,为进一步探索和实际应用铺平了道路。我们采用弗洛凯形式主义的方法并不局限于单空位型缺陷;相反,它可以扩展到包括各种类型的空位缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Predicting edge-localized monovacancy defects in zigzag graphene nanoribbons from Floquet quasienergy spectrum
In this work, we prescribe a theoretical framework aiming at predicting the position of monovacancy defects at the edges of zigzag graphene nanoribbons (ZGNRs) using Floquet-Bloch formalism, which can be experimentally observed through time- and angle-resolved photoemission spectroscopy (tr-ARPES). Our methodology involves an in-depth investigation of the Floquet quasienergy band spectrum influenced by light with varying polarization across a range of frequencies. Particularly under the influence of circularly polarized light with a frequency comparable to the bandwidth of the system, our findings suggest a promising approach for locating monovacancy defects at either edge, a challenge that proves intricate to predict from the ARPES spectrum of ZGNRs with monovacancy defects. This has been achieved by analyzing the orientation of the Floquet edge state and the appearance of new Dirac points in the vicinity of the Fermi level. The real-world applications of these captivating characteristics underscore the importance and pertinence of our theoretical framework, paving the way for additional exploration and practical use. Our approach, employing the Floquet formalism, is not limited to monovacancy-type defects; rather, it can be expanded to encompass various types of vacancy defects.
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