使用半经验伪势法高效计算过渡金属二钴化物的能带结构

Raj Kumar Paudel, Chung-Yuan Ren, Yia-Chung Chang
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引用次数: 0

摘要

半经验伪势法(SEPM)已成为准确确定能带结构的重要工具,尤其是在流维材料领域。SEPM 利用 DFT 计算得出的原子假势进行计算。与 DFT 相比,SEPM 计算具有独特的优势,因为它消除了在求解薛定谔方程时对迭代自洽解的要求,从而大大降低了计算复杂性。与传统的经验方法相比,在我们目前的方法中结合非局部和局部半经验伪势可以得到更精确的带状结构和波函数。当应用于单层 TMDC 时,调整参数使其与 DFT 计算所获得的相关值一致,就能使我们忠实地复制带状结构,为研究 TMDC 的光电特性和探索其在纳米器件中的潜在应用开辟了途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient Band Structure Calculation for Transitional-Metal Dichalcogenides Using the Semiempirical Pseudopotential Method
The Semiempirical Pseudopotential Method (SEPM) has emerged as a valuable tool for accurately determining band structures, especially in the realm of low-dimensional materials. SEPM operates by utilizing atomic pseudopotentials, which are derived from DFT calculations. SEPM calculations offer a unique advantage compared to DFT as they eliminate the requirement for iterative self-consistent solutions in solving the Schr\"odinger equation, leading to a substantial reduction in computational complexity. The incorporation of both non-local and local Semiempirical Pseudopotentials in our current approach yields band structures and wavefunctions with enhanced precision compared to traditional empirical methods. When applied to monolayer TMDCs, adjusting the parameters to align with pertinent values obtained from DFT computations enables us to faithfully replicate the band structure, opening avenues for investigating the optoelectronic properties of TMDCs and exploring their potential applications in nanodevices.
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