高功率单向移动载流子 InGaAs/InP 光电二极管的特点

IF 0.6 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Bulletin of the Lebedev Physics Institute Pub Date : 2024-06-17 DOI:10.3103/S1068335624600542

N. N. Bragin, V. N. Svetogorov, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Ivanov, M. A. Ladugin

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引用次数: 0

摘要

摘要比较了传统引脚光电探测器和基于 InGaAs/InP 异质结构的现代单向载流子光电探测器。研究考虑了这些光电探测器异质结构设计上的差异，并分析了由此产生的功能特点。结果表明，在光敏度相当的情况下，单漂移载流子光电探测器的饱和光电流大约是传统引脚光电探测器的四倍。光敏区直径为 40 μm 的器件在输入光功率分别为 10-12 mW 和 60-70 mW 时（反向偏置电压为 5 V），针式光电检测器和单漂移载流子光电检测器都能达到饱和电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Features of High-Power Uni-Traveling-Carrier InGaAs/InP Photodiodes

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Features of High-Power Uni-Traveling-Carrier InGaAs/InP Photodiodes

A comparison is made of conventional pin photodetectors and modern uni-traveling-carrier photodetectors based on InGaAs/InP heterostructures. The differences in the designs of heterostructures of these photodetectors are considered and the resulting features of their functioning are analyzed. It is shown that with comparable photosensitivity, the saturation photocurrent of uni-traveling-carrier photodetectors is approximately four times greater than that in conventional pin photodetectors. Devices with a photosensitive area 40 μm in diameter reach the saturation current at an input optical power of 10–12 and 60–70 mW for pin and uni-traveling-carrier photodetectors, respectively (reverse bias voltage of 5 V).

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来源期刊

Bulletin of the Lebedev Physics Institute PHYSICS, MULTIDISCIPLINARY-

CiteScore

0.70

自引率

25.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Bulletin of the Lebedev Physics Institute is an international peer reviewed journal that publishes results of new original experimental and theoretical studies on all topics of physics: theoretical physics; atomic and molecular physics; nuclear physics; optics; lasers; condensed matter; physics of solids; biophysics, and others.