B. Suresh Babu, Pradeep Kayshap, Sharad C. Tripathi
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引用次数: 0
摘要
太阳激波是发生在活动区(ARs)外围的等离子体准直流。通过成像和光谱诊断研究了太阳激波的运动学、物理特性和触发机制。浪涌呈典型的倒 Y 形,在过渡区(TR)的运动速度超过 200 公里/秒,远高于过渡区的声速。观测结果表明,浪涌是由磁重联引发的。此外,约 03 分钟后形成了热喷流,其传播速度与日冕的声速相当。因此,热喷流很可能是由于色球层蒸发而形成的。光谱诊断显示,浪涌底部和尖顶的电子密度分别为 log10 10.82±0.90 和 log10 9.93±1.27。此外,还发现浪涌底部和尖顶的 Si iv 线比率分别为 1.85 和 1.80 左右。因此,我们可以说大部分 Si iv 剖面是在涌流的光学厚度条件下形成的。最重要的是,浪涌底部和尖顶的一些 Si iv 光谱剖面是双峰剖面,其倾角接近中心波长。此外,在同一区域还存在光厚条件,因此很可能是自吸收导致了剖面的中心凹陷。这是首次报告日涌中的自吸收现象。
Self-absorption in solar surge as observed by IRIS
Solar surges are collimated flows of plasma that occur in the periphery of active regions (ARs). The kinematics, physical properties, and triggering mechanisms of a solar surge were studied through imaging and spectroscopic diagnosis. The surge has a typical inverted Y-shape, and it moves with a speed of more than 200 km/s in the transition-region (TR) which is much higher than the sound speed of TR. The observational findings suggest that the surge was triggered due to magnetic reconnection. In addition, a hot jet formed after around 03 minutes and propagated at a speed that is comparable to the sound speed of the corona. Hence, most probably, the hot jet forms due to the chromospheric evaporation. The spectroscopic diagnosis reveals that electron densities are log10 10.82±0.90 and log10 9.93±1.27 in the base and spire of the surge, respectively. Further, it is found that the Si iv line ratio is around 1.85 in the base and 1.80 in the spire of the surge. Hence, we say that most of the Si iv profiles are forming under optically thick conditions in the surge. Most importantly, some Si iv spectral profiles from the base and spire of the surge are double peak profiles with a dip close to the central wavelength. Also, in the same region, optically thick conditions exist, therefore, most probably, the central dip in the profiles is a result of the self-absorption. This is the first-ever report of self-absorption in the solar surges.
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