{"title":"作为双区电阻温度检测器的氧化铟锡","authors":"K. Rivera , O.J. Gregory","doi":"10.1016/j.measen.2024.101265","DOIUrl":null,"url":null,"abstract":"<div><p>Resistance temperature detectors (RTD’s) have seen an increase in popularity due to their measurement accuracy and reliability compared to thermocouples. Most RTD’s are made from refractory noble metals such as platinum due to their resistance to oxidation at temperatures greater than 800 °C and near linear output over large temperature ranges. Conductive oxides have been investigated in high temperature RTD applications due to their stability in oxidizing environments, inherently large temperature coefficients of resistance (TCR) and high melting points. In this study, thin film RTDs comprised of indium tin oxide (ITO) sputter deposited in an argon rich atmosphere were fabricated and tested. ITO RTD’s exhibited a positive TCR between 20 °C and 500 °C and a negative TCR between 700 °C and 1000 °C, thus making it suitable for temperature measurement in two different temperature regions.</p></div>","PeriodicalId":34311,"journal":{"name":"Measurement Sensors","volume":"34 ","pages":"Article 101265"},"PeriodicalIF":0.0000,"publicationDate":"2024-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2665917424002411/pdfft?md5=2ed216b267b60df9a307c40db2bbc87e&pid=1-s2.0-S2665917424002411-main.pdf","citationCount":"0","resultStr":"{\"title\":\"Indium tin oxide as a dual region resistance temperature detector\",\"authors\":\"K. Rivera , O.J. Gregory\",\"doi\":\"10.1016/j.measen.2024.101265\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Resistance temperature detectors (RTD’s) have seen an increase in popularity due to their measurement accuracy and reliability compared to thermocouples. Most RTD’s are made from refractory noble metals such as platinum due to their resistance to oxidation at temperatures greater than 800 °C and near linear output over large temperature ranges. Conductive oxides have been investigated in high temperature RTD applications due to their stability in oxidizing environments, inherently large temperature coefficients of resistance (TCR) and high melting points. In this study, thin film RTDs comprised of indium tin oxide (ITO) sputter deposited in an argon rich atmosphere were fabricated and tested. ITO RTD’s exhibited a positive TCR between 20 °C and 500 °C and a negative TCR between 700 °C and 1000 °C, thus making it suitable for temperature measurement in two different temperature regions.</p></div>\",\"PeriodicalId\":34311,\"journal\":{\"name\":\"Measurement Sensors\",\"volume\":\"34 \",\"pages\":\"Article 101265\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.sciencedirect.com/science/article/pii/S2665917424002411/pdfft?md5=2ed216b267b60df9a307c40db2bbc87e&pid=1-s2.0-S2665917424002411-main.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Measurement Sensors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2665917424002411\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Measurement Sensors","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2665917424002411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
摘要
与热电偶相比，电阻温度检测器（RTD）的测量精度和可靠性使其越来越受欢迎。大多数热电阻由铂等难熔贵金属制成，因为它们在温度超过 800 °C 时具有抗氧化性，并且在较大温度范围内具有接近线性的输出。导电氧化物因其在氧化环境中的稳定性、固有的大电阻温度系数（TCR）和高熔点，已被研究用于高温热电阻。在这项研究中，我们制造并测试了在富氩气环境中溅射沉积的铟锡氧化物（ITO）薄膜热电阻。ITO RTD 在 20 °C 至 500 °C 之间的热电阻系数为正，在 700 °C 至 1000 °C 之间的热电阻系数为负，因此适用于两个不同温度区域的温度测量。
Indium tin oxide as a dual region resistance temperature detector
Resistance temperature detectors (RTD’s) have seen an increase in popularity due to their measurement accuracy and reliability compared to thermocouples. Most RTD’s are made from refractory noble metals such as platinum due to their resistance to oxidation at temperatures greater than 800 °C and near linear output over large temperature ranges. Conductive oxides have been investigated in high temperature RTD applications due to their stability in oxidizing environments, inherently large temperature coefficients of resistance (TCR) and high melting points. In this study, thin film RTDs comprised of indium tin oxide (ITO) sputter deposited in an argon rich atmosphere were fabricated and tested. ITO RTD’s exhibited a positive TCR between 20 °C and 500 °C and a negative TCR between 700 °C and 1000 °C, thus making it suitable for temperature measurement in two different temperature regions.
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