Ting Liu, Chunlei Fang, Maosong Sun, Minghao Chen, Jianli Ji, Zhijie Shen, Yong Lu, Shuxin Tan and Jicai Zhang
{"title":"通过高温氢化物气相外延制备的 2 英寸半极性 (112) 氮化铝模板","authors":"Ting Liu, Chunlei Fang, Maosong Sun, Minghao Chen, Jianli Ji, Zhijie Shen, Yong Lu, Shuxin Tan and Jicai Zhang","doi":"10.1039/D4CE00335G","DOIUrl":null,"url":null,"abstract":"<p >Single-crystal semi-polar (11<img>2) AlN films are grown on 2-inch <em>m</em>-plane sapphire substrates by high-temperature hydride vapor phase epitaxy (HVPE). The introduction of the sapphire nitridation pretreatment and low-temperature AlN buffer layer suppresses the formation of undesired (10<img>3) and (10<img>1) AlN, leading to the desired single-crystal (11<img>2) AlN film. The high growth temperature promotes a shift in growth mode from three-dimensional islands to two-dimensional step flow. This facilitates grain coalescence, resulting in the formation of well-defined macro steps on the (11<img>2) AlN surface. The 9.02 μm-thick (11<img>2) AlN film exhibits excellent crystalline quality, as evidenced by the narrow full widths at half maximum of 547′′ and 634′′ for the X-ray rocking curves measured along the [11<img>3]<small><sub>AlN</sub></small> and [1<img>00]<small><sub>AlN</sub></small> directions, respectively. The surface of the 2-inch (11<img>2) AlN film is free of cracks and unmerged grains, providing a suitable substrate for the subsequent epitaxial growth of (11<img>2) AlN light emitter layers.</p>","PeriodicalId":70,"journal":{"name":"CrystEngComm","volume":" 25","pages":" 3383-3387"},"PeriodicalIF":2.6000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"2-inch semi-polar (112) AlN templates prepared by high-temperature hydride vapor phase epitaxy\",\"authors\":\"Ting Liu, Chunlei Fang, Maosong Sun, Minghao Chen, Jianli Ji, Zhijie Shen, Yong Lu, Shuxin Tan and Jicai Zhang\",\"doi\":\"10.1039/D4CE00335G\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Single-crystal semi-polar (11<img>2) AlN films are grown on 2-inch <em>m</em>-plane sapphire substrates by high-temperature hydride vapor phase epitaxy (HVPE). The introduction of the sapphire nitridation pretreatment and low-temperature AlN buffer layer suppresses the formation of undesired (10<img>3) and (10<img>1) AlN, leading to the desired single-crystal (11<img>2) AlN film. The high growth temperature promotes a shift in growth mode from three-dimensional islands to two-dimensional step flow. This facilitates grain coalescence, resulting in the formation of well-defined macro steps on the (11<img>2) AlN surface. The 9.02 μm-thick (11<img>2) AlN film exhibits excellent crystalline quality, as evidenced by the narrow full widths at half maximum of 547′′ and 634′′ for the X-ray rocking curves measured along the [11<img>3]<small><sub>AlN</sub></small> and [1<img>00]<small><sub>AlN</sub></small> directions, respectively. The surface of the 2-inch (11<img>2) AlN film is free of cracks and unmerged grains, providing a suitable substrate for the subsequent epitaxial growth of (11<img>2) AlN light emitter layers.</p>\",\"PeriodicalId\":70,\"journal\":{\"name\":\"CrystEngComm\",\"volume\":\" 25\",\"pages\":\" 3383-3387\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2024-06-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"CrystEngComm\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.rsc.org/en/content/articlelanding/2024/ce/d4ce00335g\",\"RegionNum\":3,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"CrystEngComm","FirstCategoryId":"92","ListUrlMain":"https://pubs.rsc.org/en/content/articlelanding/2024/ce/d4ce00335g","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Single-crystal semi-polar (112) AlN films are grown on 2-inch m-plane sapphire substrates by high-temperature hydride vapor phase epitaxy (HVPE). The introduction of the sapphire nitridation pretreatment and low-temperature AlN buffer layer suppresses the formation of undesired (103) and (101) AlN, leading to the desired single-crystal (112) AlN film. The high growth temperature promotes a shift in growth mode from three-dimensional islands to two-dimensional step flow. This facilitates grain coalescence, resulting in the formation of well-defined macro steps on the (112) AlN surface. The 9.02 μm-thick (112) AlN film exhibits excellent crystalline quality, as evidenced by the narrow full widths at half maximum of 547′′ and 634′′ for the X-ray rocking curves measured along the [113]AlN and [100]AlN directions, respectively. The surface of the 2-inch (112) AlN film is free of cracks and unmerged grains, providing a suitable substrate for the subsequent epitaxial growth of (112) AlN light emitter layers.
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