Tiantian Luan, Sen Huang, Guanjun Jing, Jie Fan, H. Yin, Xinguo Gao, Sheng Zhang, K. Wei, Yankui Li, Qimeng Jiang, Xinhua Wang, Bin Hou, Lin-An Yang, Xiaohua Ma, Xinyu Liu
{"title":"硅衬底上的无凹槽增强型 AlGaN/GaN 射频 HEMT","authors":"Tiantian Luan, Sen Huang, Guanjun Jing, Jie Fan, H. Yin, Xinguo Gao, Sheng Zhang, K. Wei, Yankui Li, Qimeng Jiang, Xinhua Wang, Bin Hou, Lin-An Yang, Xiaohua Ma, Xinyu Liu","doi":"10.1088/1674-4926/23120006","DOIUrl":null,"url":null,"abstract":"Enhancement-mode (E-mode) GaN-on-Si radio-frequency (RF) high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin-barrier (UTB) AlGaN (<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas (2DEG) channel. The fabricated E-mode HEMTs exhibit a relatively high threshold voltage (V TH) of +1.1 V with good uniformity. A maximum current/power gain cut-off frequency (f T/f MAX) of 31.3/99.6 GHz with a power added efficiency (PAE) of 52.47% and an output power density (P out) of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-µm gate and Au-free ohmic contact.","PeriodicalId":507388,"journal":{"name":"Journal of Semiconductors","volume":"6 7","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate\",\"authors\":\"Tiantian Luan, Sen Huang, Guanjun Jing, Jie Fan, H. Yin, Xinguo Gao, Sheng Zhang, K. Wei, Yankui Li, Qimeng Jiang, Xinhua Wang, Bin Hou, Lin-An Yang, Xiaohua Ma, Xinyu Liu\",\"doi\":\"10.1088/1674-4926/23120006\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Enhancement-mode (E-mode) GaN-on-Si radio-frequency (RF) high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin-barrier (UTB) AlGaN (<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas (2DEG) channel. The fabricated E-mode HEMTs exhibit a relatively high threshold voltage (V TH) of +1.1 V with good uniformity. A maximum current/power gain cut-off frequency (f T/f MAX) of 31.3/99.6 GHz with a power added efficiency (PAE) of 52.47% and an output power density (P out) of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-µm gate and Au-free ohmic contact.\",\"PeriodicalId\":507388,\"journal\":{\"name\":\"Journal of Semiconductors\",\"volume\":\"6 7\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Semiconductors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-4926/23120006\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Semiconductors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1674-4926/23120006","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate
Enhancement-mode (E-mode) GaN-on-Si radio-frequency (RF) high-electron-mobility transistors (HEMTs) were fabricated on an ultrathin-barrier (UTB) AlGaN (<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas (2DEG) channel. The fabricated E-mode HEMTs exhibit a relatively high threshold voltage (V TH) of +1.1 V with good uniformity. A maximum current/power gain cut-off frequency (f T/f MAX) of 31.3/99.6 GHz with a power added efficiency (PAE) of 52.47% and an output power density (P out) of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-µm gate and Au-free ohmic contact.
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