光学传感器硒化锌晶体的通量生长

Meghan Brandt, Nicholas Schmidt, Aria Tauraso, Rachit B. Sood, C. Su, Bradley Arnold, Fow-Sen Choa, Brian Cullum, N. Singh
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摘要

二元和三元硒化物晶体已被证明具有光学传感器和激光应用的多功能性。本研究的目的是评估掺杂硒化锌晶体的反应性通量生长过程,并与大块物理气相传输(PVT)生长的大单晶进行比较。合成的实验过程包括将 PVP(聚乙烯吡咯烷酮)助熔剂溶解在去离子水中,在 65°C 的温度下加热,搅拌直至 PVP 全部溶解。我们加入溶于乙醇的 Se 粉末,再次加热几分钟。我们在乙醇/硒混合物中加入 ZnCl2 溶液,在远低于 100 摄氏度的温度下加热。将水和乙醇溶剂分离并置于 200C 温度下。残留物中掺杂了过渡金属。对这种材料进行了发光表征,并与通过 PVD 工艺生长的块状晶体的结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Flux growth of optical sensor zinc selenide crystals
Binary and ternary selenide crystals have been proven as multifunctional for optical sensors and laser applications. The aim of this study was to evaluate reactive flux growth process of the doped zinc selenide crystals and compared with bulk Physical Vapor Transport (PVT) grown large single crystals. The experimental process of synthesis involved PVP (Polyvinyl Pyrrolidone) flux dissolved in DI water which was heated at 65°C, stirred until all PVP dissolved. We added Se powder dissolved in ethanol and heated again for few minutes. We added ZnCl2 solution in ethanol/Se mixture and heated at well below 100 0C. Water and ethanol solvent was separated and placed at 200C. The residue material was doped with transition metal. This material was characterized for the luminescence and compared with the results of bulk crystals grown by PVD process.
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