{"title":"基于 CMOS 技术的集成电路锁存效应抑制方法研究","authors":"Junli Xiang","doi":"10.61173/av9efx49","DOIUrl":null,"url":null,"abstract":"Latch-up effect is a kind of parasitic effect in CMOS integrated circuits. Taking CMOS inverter as an example, this paper analyzes the formation mechanism of latch-up effect in CMOS integrated circuits, deduces the trigger conditions of latch-up effect by establishing equivalent circuit models, introduces the methods of suppressing latch-up effect from layout design and process optimization, and finally conducts simulation test to verify the effect of suppression methods.","PeriodicalId":438278,"journal":{"name":"Science and Technology of Engineering, Chemistry and Environmental Protection","volume":"26 26","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on Latch-up effect suppression method of IC based on CMOS technology\",\"authors\":\"Junli Xiang\",\"doi\":\"10.61173/av9efx49\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Latch-up effect is a kind of parasitic effect in CMOS integrated circuits. Taking CMOS inverter as an example, this paper analyzes the formation mechanism of latch-up effect in CMOS integrated circuits, deduces the trigger conditions of latch-up effect by establishing equivalent circuit models, introduces the methods of suppressing latch-up effect from layout design and process optimization, and finally conducts simulation test to verify the effect of suppression methods.\",\"PeriodicalId\":438278,\"journal\":{\"name\":\"Science and Technology of Engineering, Chemistry and Environmental Protection\",\"volume\":\"26 26\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science and Technology of Engineering, Chemistry and Environmental Protection\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.61173/av9efx49\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science and Technology of Engineering, Chemistry and Environmental Protection","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.61173/av9efx49","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Research on Latch-up effect suppression method of IC based on CMOS technology
Latch-up effect is a kind of parasitic effect in CMOS integrated circuits. Taking CMOS inverter as an example, this paper analyzes the formation mechanism of latch-up effect in CMOS integrated circuits, deduces the trigger conditions of latch-up effect by establishing equivalent circuit models, introduces the methods of suppressing latch-up effect from layout design and process optimization, and finally conducts simulation test to verify the effect of suppression methods.