基于 CMOS 技术的集成电路锁存效应抑制方法研究

Junli Xiang
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摘要

闩锁效应是 CMOS 集成电路中的一种寄生效应。本文以 CMOS 逆变器为例,分析了 CMOS 集成电路中闩锁效应的形成机理,通过建立等效电路模型推导出闩锁效应的触发条件,并从版图设计和工艺优化两方面介绍了抑制闩锁效应的方法,最后通过仿真测试验证了抑制方法的效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Research on Latch-up effect suppression method of IC based on CMOS technology
Latch-up effect is a kind of parasitic effect in CMOS integrated circuits. Taking CMOS inverter as an example, this paper analyzes the formation mechanism of latch-up effect in CMOS integrated circuits, deduces the trigger conditions of latch-up effect by establishing equivalent circuit models, introduces the methods of suppressing latch-up effect from layout design and process optimization, and finally conducts simulation test to verify the effect of suppression methods.
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