Modified nonlinear ion drift model for TiO2 memristor: a temperature dependent study

The creation and optimisation of memristor models with different topologies and physical mechanisms have received increasing attention in recent years. Memristors, known for their unique resistive switching mechanism, have garnered significant interest as promising components for next-generation computing. However, to effectively design and test memristor-based circuits, it is crucial to have a mathematical representation of the experimentally determined current-voltage characteristics of memristors. This paper proposes a model and conducts an analysis that offers insights into memristor technology, beginning with its characteristics and extending to simulations involving various parameters. The proposed model and its dependency on temperature are implemented using MATLAB. The model captures changes in current characteristics concerning the fundamental voltage without using any window functions. Thus, it accurately represents the variation in memristance with temperature, contributing to a more precise and observed modelling approach.