Performance parameters estimation of high speed Silicon/Germanium/InGaAsP avalanche photodiodes wide bandwidth capability in ultra high speed optical communication system

Abstract This paper has clarified the performance parameters estimation of high speed silicon/germanium/InGaAsP avalanche photodiodes wide bandwidth capability in ultrahigh speed optical communication system. The basic structure configuration of avalanche photodiode is clarified. The basic depletion region configuration schematic view is demonstrated. As well as the maximum electric field is indicated for impact ionization through avalanche photodiode in the presence of load. Various avalanche photo-detectors multiplication factor is clarified versus reverse bias voltage at room temperature. Different avalanche photo-detectors dark current is measured against avalanche photo-detectors volume at room temperature. Various avalanche photo-detectors effective doping concentration is demonstrated against ambient temperature variations. Si/Ge/InGaAsP avalanche photo-detectors excess noise factor is demonstrated versus the ionization ratio at room temperature (T = 300 K) and different ambient temperature (T = 350 K and T = 400 K). Various avalanche photo-detectors excess noise factor is measured clearly versus the multiplication factor at room temperature. Si/Ge/InGaAsP avalanche photo-detectors excess noise factor is demonstrated versus reverse bias voltage at room temperature. Si/Ge/InGaAsP avalanche photo-detectors noise equivalent power is clarified versus multiplication factor at room temperature. Various avalanche photo-detectors noise equivalent power is studied versus temperature variations. Si/Ge/InGaAsP avalanche photo-detectors sensitivity is measured in relation to the temperature variations. Different avalanche photo-detectors sensitivity is demonstrated in relation to reverse bias voltage variations at room temperature.