X. Huang, S. Q. Lim, T. Ratcliff, L. Smillie, G. J. Grzybowski, B. Claflin, J. Warrender, J. S. Williams
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However, the nature of the defects was quite different to the RPECVD method, whereby the line defects were not threading dislocations but stackinglike defects, which developed into arrays of these defects in the high Sn content region close to the surface. For the purpose of comparing RPECVD and ion-implantation methods, alloy films of similar thickness (400–450 nm) and Sn content (4.5–6.5 at. %) were examined. Film parameters (thickness, Sn content, Sn solubility, and segregation), as well as film quality and defect structures, were examined for both fabrication methods using several analytical techniques. This comparison provided us with a better physical understanding of our GeSn films and will help inform future growth/fabrication strategies targeted at minimizing defects formed in the GeSn films for the realization of optoelectronic devices.","PeriodicalId":282302,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"32 23","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods\",\"authors\":\"X. Huang, S. Q. Lim, T. Ratcliff, L. Smillie, G. J. Grzybowski, B. Claflin, J. Warrender, J. S. 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引用次数: 0
摘要
利用直接在硅衬底上进行远程等离子体增强化学气相沉积(RPECVD)和将锡离子注入到 Ge 中两种方法,制备出了锡含量远高于其在 Ge 中平衡溶解极限的锗锡合金(GeSn)薄膜。就 RPECVD 而言,302 °C 的生长温度产生了具有高缺陷密度的完全松弛 GeSn 合金,主要是与硅和 GeSn 之间的巨大晶格失配有关的穿线位错。在植入情况下,使用脉冲激光熔化在几十纳秒的时间尺度内熔化和结晶 GeSn 层。由此产生的 GeSn 层也出现松弛和缺陷,这可能也是由于与底层 Ge 晶格不匹配造成的。然而,缺陷的性质与 RPECVD 方法截然不同,其中的线缺陷不是穿线位错,而是堆积缺陷,在靠近表面的高锡含量区域发展成这些缺陷的阵列。为了比较 RPECVD 法和离子注入法,对厚度(400-450 nm)和含 Sn 量(4.5-6.5 at.使用多种分析技术对两种制造方法的薄膜参数(厚度、锡含量、锡溶解度和偏析)以及薄膜质量和缺陷结构进行了检测。通过比较,我们对 GeSn 薄膜的物理特性有了更好的了解,这将有助于为未来的生长/制造策略提供依据,从而最大限度地减少 GeSn 薄膜中形成的缺陷,实现光电设备的制造。
Comparison of GeSn alloy films prepared by ion implantation and remote plasma-enhanced chemical vapor deposition methods
Thin films of germanium-tin (GeSn) alloy with Sn content well above its equilibrium solubility limit in Ge are produced using both remote plasma-enhanced chemical vapor deposition (RPECVD) directly on silicon substrates and ion implantation of Sn into Ge. For RPECVD, the growth temperature of 302 °C resulted in fully relaxed GeSn alloys with high defect density, principally threading dislocations related to the large lattice mismatch between Si and GeSn. For the implantation case, pulsed laser melting was used to melt and crystallize the GeSn layer on a time scale of a few tens of nanoseconds. The resulting GeSn layers were also relaxed and defective, presumably again as a result of lattice mismatch with the underlying Ge lattice. However, the nature of the defects was quite different to the RPECVD method, whereby the line defects were not threading dislocations but stackinglike defects, which developed into arrays of these defects in the high Sn content region close to the surface. For the purpose of comparing RPECVD and ion-implantation methods, alloy films of similar thickness (400–450 nm) and Sn content (4.5–6.5 at. %) were examined. Film parameters (thickness, Sn content, Sn solubility, and segregation), as well as film quality and defect structures, were examined for both fabrication methods using several analytical techniques. This comparison provided us with a better physical understanding of our GeSn films and will help inform future growth/fabrication strategies targeted at minimizing defects formed in the GeSn films for the realization of optoelectronic devices.