构建用于高性能光电探测器的 g-C3N4/SnSe2/H-TiO2 三元异质结

Xianfeng Zhao, Xiaoxu Yan, Xinxin Shao, Kangpeng Li, Minghong Sun, Xinpeng Ji, Huidan Lu, Yongping Liu
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摘要

二维层状材料因其独特的光电特性已被广泛应用于光电探测器领域。其中,基于二维材料的多异质结具有较高的载流子分离效率,有望被设计成高性能光电探测器(PD)。这项工作的重点是制备用于光电探测器的 g-C3N4/SnSe2/H-TiO2 三元异质结,其制备方法是采用化学气相沉积法和浸渍法分别在 TiO2 纳米管阵列上沉积 SnSe2 和 g-C3N4 纳米片。g-C3N4/SnSe2/H-TiO2 三元异质结的形成增强并拓宽了紫外-可见光范围内的吸收。光电化学测量证实,所制备的 g-C3N4/SnSe2/H-TiO2 三元异质结光电探测器在 370、450 和 520 纳米波长具有显著的光探测能力,即宽带光探测行为。值得注意的是,在波长为 370 nm 的光照下,它的响应率高达 2.742 A/W,探测率高达 5.84×10¹⁰ Jones,外部量子效率为 9.21×10²%,而且稳定性极佳。这种高性能可归功于光生载流子在三元异质结内的有效分离和转移,从而显著增强了光响应。新型宽带响应g-C3N4/SnSe2/TiO2三元异质结的构建有望推动未来宽带、高性能和高集成度光电探测器的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Construction of g-C3N4/SnSe2/H-TiO2 Ternary Heterojunction for High-Performance Photodetectors
Two-dimensional layered materials have been widely used in the field of photodetectors because of their unique photoelectric properties. Among them, the multi-heterojunction based on two-dimensional materials with high carrier separation efficiency is expected to be designed as a high-performance photodetector (PD). This work focuses on the fabrication of g-C3N4/SnSe2/H-TiO2 ternary heterojunctions for photodetectors, obtained by depositing SnSe2 and g-C3N4 nanosheets onto TiO2 nanotube arrays using chemical vapor deposition and impregnation methods, respectively. The formation of the g-C3N4/SnSe2/H-TiO2 ternary heterojunction enhances and broadens absorption in the ultraviolet-visible range. Photoelectrochemical measurements have confirmed that the fabricated g-C3N4/SnSe2/H-TiO2 ternary heterojunction photodetector exhibits remarkable light detection capabilities at 370, 450, and 520 nm, meaning broadband photodetection behavior. Notably, under light illumination of 370 nm wavelength, it demonstrates a high responsivity of 2.742 A/W, an impressive detectivity of 5.84×10¹⁰ Jones, an external quantum efficiency of 9.21×10² %, and excellent stability. This high performance can be attributed to the effective separation and transfer of photogenerated carriers within the ternary heterojunction, significantly enhancing the photoresponse. The construction of the novel broadband-responsive ternary g-C3N4/SnSe2/TiO2 heterojunction holds promise for driving the future development of wideband, high-performance, and highly integrated photodetectors.
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