采用 45 纳米 CMOS 技术设计 0.6 V 的高速 MCML D-Latch

Sivasakthi Madheswaran, Radhika Panneerselvam
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引用次数: 0

摘要

在高速电路设计中,金属氧化物半导体(MOS)电流模式逻辑(MCML)通常是首选。本文设计了一种新型低电压折叠式 (LVF) MCML D-锁存器。现有的 MCML D-Latch 拓扑结构功耗较高,工作电压为 1V。MCML 电路能最大限度地减少延迟并执行快速操作,因此可用于高频应用。在电压为 0.6 V、温度为 27 °C、采用 45 纳米互补金属氧化物半导体(CMOS)技术的 cadence virtuoso 中,对所提出的 LVF MCML D-Latch 进行了功率、延迟、功率延迟积和输出噪声等参数分析。与现有电路相比,所提出的技术降低了 62.11% 的功率,瞬态响应速度提高了 51.23%,噪声消除提高了 26.13%。它还实现了 96% 的输出摆幅,与其他技术相比效率更高。最后,在不同温度下进行了参数分析,以验证所提电路的稳定性。从仿真结果来看,所提出的 LVF MCML D-Latch 在高速锁相环 (PLL) 应用中具有更好的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of a high-speed MCML D-Latch at 0.6 V in 45 nm CMOS technology
Metal oxide semiconductor (MOS) current mode logic (MCML) is generally preferred for high-speed circuit design. In this paper, a novel low voltage folded (LVF) MCML D-Latch is designed. The existing topologies of the MCML D-Latch consume more power and operate at 1 V. The proposed D-Latch can operate at 0.6V with better delay and power management. MCML circuits minimize delay and perform fast operations, hence it can be used in high-frequency applications. The proposed LVF MCML D–Latch is analyzed with the parameters such as power, delay, power delay product and output noise using cadence virtuoso in 45 nm complementary metal oxide semiconductor (CMOS) technology at a voltage of 0.6 V and a temperature of 27 °C. The proposed technique achieves 62.11% of power reduction, transient response speed improved by 51.23% and noise cancellation becomes 26.13% improvement over the existing circuit. It also achieves 96% of output swing which is more efficient compared to others. Finally, the parametric analysis is performed with different temperatures to verify the stability of the proposed circuit. From the simulated results, it is clear that the proposed LVF MCML D-Latch provides better performance in high-speed phase locked loop (PLL) applications.
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