碘掺杂对溶液加工氧化铟薄膜晶体管结构和电气特性的影响及其在碘传感中的潜在应用

IF 0.8 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
Junhao Feng, Ji-Hoon Choi, Xue Zhang, Jaehoon Park, Jin-Hyuk Bae
{"title":"碘掺杂对溶液加工氧化铟薄膜晶体管结构和电气特性的影响及其在碘传感中的潜在应用","authors":"Junhao Feng,&nbsp;Ji-Hoon Choi,&nbsp;Xue Zhang,&nbsp;Jaehoon Park,&nbsp;Jin-Hyuk Bae","doi":"10.1007/s40042-024-01099-3","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigated the influence of solution-processed indium oxide (In<sub>2</sub>O<sub>3</sub>) thin-film transistors (TFTs) with various iodine vapor (I<sub>2</sub>) doping times. Prolonged iodine doping time is found to induce some important changes in the devices: (i) increase in In<sub>2</sub>O<sub>3</sub> film thickness and nanoparticle size; (ii) decrease in the metal-hydroxyl bonding and increase in the metal–oxygen bonding; (iii) the positive moved threshold voltage, lower field-effect mobility, and higher on/off current ratio from 0 s (sec) to 10 s. Furthermore, vacuum thermal treatment, as a facial, novel method to recover the electrical performances of I<sub>2</sub>-doped In<sub>2</sub>O<sub>3</sub> TFTs was examined. I<sub>2</sub>-doped In<sub>2</sub>O<sub>3</sub> TFTs for 10 s with vacuum thermal treatment at 200 ℃ exhibited excellent recovery properties of electrical. The results indicate that iodine doping can change the electrical properties of In<sub>2</sub>O<sub>3</sub> TFTs and could potentially be used for I<sub>2</sub> gas sensor.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 1","pages":"66 - 75"},"PeriodicalIF":0.8000,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing\",\"authors\":\"Junhao Feng,&nbsp;Ji-Hoon Choi,&nbsp;Xue Zhang,&nbsp;Jaehoon Park,&nbsp;Jin-Hyuk Bae\",\"doi\":\"10.1007/s40042-024-01099-3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>This study investigated the influence of solution-processed indium oxide (In<sub>2</sub>O<sub>3</sub>) thin-film transistors (TFTs) with various iodine vapor (I<sub>2</sub>) doping times. Prolonged iodine doping time is found to induce some important changes in the devices: (i) increase in In<sub>2</sub>O<sub>3</sub> film thickness and nanoparticle size; (ii) decrease in the metal-hydroxyl bonding and increase in the metal–oxygen bonding; (iii) the positive moved threshold voltage, lower field-effect mobility, and higher on/off current ratio from 0 s (sec) to 10 s. Furthermore, vacuum thermal treatment, as a facial, novel method to recover the electrical performances of I<sub>2</sub>-doped In<sub>2</sub>O<sub>3</sub> TFTs was examined. I<sub>2</sub>-doped In<sub>2</sub>O<sub>3</sub> TFTs for 10 s with vacuum thermal treatment at 200 ℃ exhibited excellent recovery properties of electrical. The results indicate that iodine doping can change the electrical properties of In<sub>2</sub>O<sub>3</sub> TFTs and could potentially be used for I<sub>2</sub> gas sensor.</p></div>\",\"PeriodicalId\":677,\"journal\":{\"name\":\"Journal of the Korean Physical Society\",\"volume\":\"85 1\",\"pages\":\"66 - 75\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2024-05-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Korean Physical Society\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40042-024-01099-3\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-024-01099-3","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

本研究调查了溶液加工的氧化铟(In2O3)薄膜晶体管(TFT)在不同碘蒸汽(I2)掺杂时间下的影响。研究发现,延长碘掺杂时间会导致器件发生一些重要变化:(i) In2O3 薄膜厚度和纳米颗粒尺寸增加;(ii) 金属-羟基键减少,金属-氧键增加;(iii) 从 0 秒到 10 秒,阈值电压正向移动,场效应迁移率降低,导通/截止电流比升高。在 200 ℃ 下真空热处理 10 秒的碘掺杂 In2O3 TFT 表现出优异的电性能恢复特性。结果表明,碘掺杂能改变 In2O3 TFT 的电学特性,有望用于 I2 气体传感器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing

Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing

Effects of iodine doping on structural and electrical characteristics of solution-processed indium oxide thin-film transistors and its potential application for iodine sensing

This study investigated the influence of solution-processed indium oxide (In2O3) thin-film transistors (TFTs) with various iodine vapor (I2) doping times. Prolonged iodine doping time is found to induce some important changes in the devices: (i) increase in In2O3 film thickness and nanoparticle size; (ii) decrease in the metal-hydroxyl bonding and increase in the metal–oxygen bonding; (iii) the positive moved threshold voltage, lower field-effect mobility, and higher on/off current ratio from 0 s (sec) to 10 s. Furthermore, vacuum thermal treatment, as a facial, novel method to recover the electrical performances of I2-doped In2O3 TFTs was examined. I2-doped In2O3 TFTs for 10 s with vacuum thermal treatment at 200 ℃ exhibited excellent recovery properties of electrical. The results indicate that iodine doping can change the electrical properties of In2O3 TFTs and could potentially be used for I2 gas sensor.

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来源期刊
Journal of the Korean Physical Society
Journal of the Korean Physical Society PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.20
自引率
16.70%
发文量
276
审稿时长
5.5 months
期刊介绍: The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
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