Total ionizing dose effect on graphene field effect transistors

In this work, the total-ionizing-dose (TID) effects on graphene field effect transistors (GFETs) were investigated using 10 keV X-ray irradiation under various gate biases in irradiation environment. For reliability applications, the Dirac voltage (V_Dirac) shifted negatively during irradiation as the hole mobility (μ_h) and electron mobility (μ_e) declined under the positive gate and zero bias. Under negative gate bias, the Dirac voltage (V_Dirac) moved in a positive direction, reducing hole mobility (μ_h) and electron mobility (μ_e). Thus, we can conclude that the positive gate bias is the worst bias of GFETs by contrasting the experimental outcomes under various biases. During the recovery time of 9 h and 24 h after irradiation, and it became clear that the Dirac voltage (V_Dirac) shifted in a positive direction. Notably, the emergence of trap charges caused by irradiation, and the accumulation of trap charges can be used to explain these phenomena. The recovery time outcome data indicate that radiation damage was caused by the trap charge created during irradiation. Therefore, this work assists in the implementation of GFETs in challenging environments.