针对即将到来的 5 纳米以下技术节点,采用 NEGF 方法对无结型圆柱栅极全周硅纳米线 MOSFET 的双金属栅极工作函数工程进行直流和模拟/射频性能评估

IF 1.9 4区 工程技术 Q2 Engineering
Sanjay, Vibhor Kumar, Anil Vohra
{"title":"针对即将到来的 5 纳米以下技术节点,采用 NEGF 方法对无结型圆柱栅极全周硅纳米线 MOSFET 的双金属栅极工作函数工程进行直流和模拟/射频性能评估","authors":"Sanjay, Vibhor Kumar, Anil Vohra","doi":"10.1007/s12541-024-01023-6","DOIUrl":null,"url":null,"abstract":"<p>Present work investigates the DC and Analog/RF characteristics such as the drain current <span>\\(({I}_{D}\\)</span>), Transconductance <span>\\({(g}_{m})\\)</span>, Transconductance Generation Factor (TGF), Cut-off frequency <span>\\({(f}_{T})\\)</span>, Frequency Transconductance Product (FTP), Transit time <span>\\((\\tau ),\\)</span> and the total resistance of the source region, drain region, and channel resistance <span>\\({(R}_{SD+CH})\\)</span> for Dual Metal (DM) Inversion Mode (IM) and Junctionless (JL) Cylindrical Gate All Around (CGAA) Silicon nanowire (SiNW) MOSFETs with 5 nm gate length using Silvaco ATLAS 3D TCAD. In this work, the Non-Equilibrium Green’s Function approach along with the self-consistent solution of Schrödinger’s equation and Poisson’s equation has been considered. The channel is taken to be lightly doped in the case of IM DM CGAA SiNW type of device. The effect of DM Gate work function engineering for SiNW channel of diameter 3 nm with gate oxide <span>\\(({SiO}_{2})\\)</span> the thickness of 0.8 nm on <span>\\({I}_{D}\\)</span>,<span>\\({ g}_{m}\\)</span>, TGF, <span>\\({f}_{T}\\)</span>, <span>\\(\\tau\\)</span>, FTP and <span>\\({R}_{CH}\\)</span> has been studied. Moreover, a comparative study has been made between IMDM and JLDM CGAA SiNW devices with the above-mentioned parameters. For the JL device, the optimization of doping concentration is performed to get the same (i) I<sub>ON</sub> current and (ii) threshold voltage (V<sub>TH</sub>) as the IM device. About 3.09 times and 21.89 times reduction in I<sub>OFF</sub> is seen for the same I<sub>ON</sub> and V<sub>TH</sub> optimized devices respectively as compared to IM device. It has been found that DM Gate variation minimizes drain-induced barrier lowering (DIBL) in IM and JL devices. The JL SiNW showed much lower DIBL ~ 16.46 mV/V, a near ideal SS ~ 60 mV/dec, and higher <span>\\({I}_{ON}/{I}_{OFF}\\)</span> current ratio ~ 7.04 × 10<sup>8</sup> which is much better as compared to those reported in the literature for cylindrical gate all around (CGAA) devices. Also, it is found that the JL SiNW device performs better than IM in terms of SS, DIBL, <span>\\({I}_{ON}/{I}_{OFF}\\)</span>, <span>\\({g}_{m},\\)</span> TGF, f<sub>T</sub>, <span>\\(\\tau\\)</span>, FTP and <span>\\({R}_{SD+CH}\\)</span>.</p>","PeriodicalId":14359,"journal":{"name":"International Journal of Precision Engineering and Manufacturing","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node\",\"authors\":\"Sanjay, Vibhor Kumar, Anil Vohra\",\"doi\":\"10.1007/s12541-024-01023-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Present work investigates the DC and Analog/RF characteristics such as the drain current <span>\\\\(({I}_{D}\\\\)</span>), Transconductance <span>\\\\({(g}_{m})\\\\)</span>, Transconductance Generation Factor (TGF), Cut-off frequency <span>\\\\({(f}_{T})\\\\)</span>, Frequency Transconductance Product (FTP), Transit time <span>\\\\((\\\\tau ),\\\\)</span> and the total resistance of the source region, drain region, and channel resistance <span>\\\\({(R}_{SD+CH})\\\\)</span> for Dual Metal (DM) Inversion Mode (IM) and Junctionless (JL) Cylindrical Gate All Around (CGAA) Silicon nanowire (SiNW) MOSFETs with 5 nm gate length using Silvaco ATLAS 3D TCAD. In this work, the Non-Equilibrium Green’s Function approach along with the self-consistent solution of Schrödinger’s equation and Poisson’s equation has been considered. The channel is taken to be lightly doped in the case of IM DM CGAA SiNW type of device. The effect of DM Gate work function engineering for SiNW channel of diameter 3 nm with gate oxide <span>\\\\(({SiO}_{2})\\\\)</span> the thickness of 0.8 nm on <span>\\\\({I}_{D}\\\\)</span>,<span>\\\\({ g}_{m}\\\\)</span>, TGF, <span>\\\\({f}_{T}\\\\)</span>, <span>\\\\(\\\\tau\\\\)</span>, FTP and <span>\\\\({R}_{CH}\\\\)</span> has been studied. Moreover, a comparative study has been made between IMDM and JLDM CGAA SiNW devices with the above-mentioned parameters. For the JL device, the optimization of doping concentration is performed to get the same (i) I<sub>ON</sub> current and (ii) threshold voltage (V<sub>TH</sub>) as the IM device. About 3.09 times and 21.89 times reduction in I<sub>OFF</sub> is seen for the same I<sub>ON</sub> and V<sub>TH</sub> optimized devices respectively as compared to IM device. It has been found that DM Gate variation minimizes drain-induced barrier lowering (DIBL) in IM and JL devices. The JL SiNW showed much lower DIBL ~ 16.46 mV/V, a near ideal SS ~ 60 mV/dec, and higher <span>\\\\({I}_{ON}/{I}_{OFF}\\\\)</span> current ratio ~ 7.04 × 10<sup>8</sup> which is much better as compared to those reported in the literature for cylindrical gate all around (CGAA) devices. Also, it is found that the JL SiNW device performs better than IM in terms of SS, DIBL, <span>\\\\({I}_{ON}/{I}_{OFF}\\\\)</span>, <span>\\\\({g}_{m},\\\\)</span> TGF, f<sub>T</sub>, <span>\\\\(\\\\tau\\\\)</span>, FTP and <span>\\\\({R}_{SD+CH}\\\\)</span>.</p>\",\"PeriodicalId\":14359,\"journal\":{\"name\":\"International Journal of Precision Engineering and Manufacturing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2024-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Precision Engineering and Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s12541-024-01023-6\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Precision Engineering and Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s12541-024-01023-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0

摘要

本研究调查了双金属反转模式(DM)和双金属反转模式(IM)的直流和模拟/射频特性,如漏极电流(({I}_{D}\))、跨导(({(g}_{m})\)、跨导生成因子(TGF)、截止频率(({f}_{T})\)、频率跨导积(FTP)、传输时间((\tau )、\和源极区总电阻、漏极区总电阻以及沟道电阻 \({(R}_{SD+CH})\),使用 Silvaco ATLAS 3D TCAD 对 5 nm 栅极长度的双金属 (DM) 反转模式 (IM) 和无结 (JL) 圆柱栅 (CGAA) 硅纳米线 (SiNW) MOSFET 进行了计算。在这项工作中,考虑了非平衡格林函数方法以及薛定谔方程和泊松方程的自洽解。在 IM DM CGAA SiNW 器件中,沟道被视为轻掺杂。研究了栅极氧化物(({SiO}_{2}))厚度为0.8 nm、直径为3 nm的SiNW沟道的DM栅极功函数工程对\({I}_{D}\)、\({g}_{m}\)、TGF、\({f}_{T}\)、\(\tau\)、FTP和\({R}_{CH}\)的影响。此外,还对上述参数下的 IMDM 和 JLDM CGAA SiNW 器件进行了比较研究。对于 JL 器件,对掺杂浓度进行了优化,以获得与 IM 器件相同的 (i) 离子电流和 (ii) 阈值电压 (VTH)。与 IM 器件相比,相同离子电流和 VTH 的优化器件的 IOFF 分别降低了约 3.09 倍和 21.89 倍。研究发现,在 IM 和 JL 器件中,DM 栅极变化最大程度地降低了漏极诱导的势垒降低(DIBL)。JL SiNW 显示出更低的 DIBL ~ 16.46 mV/V,接近理想的 SS ~ 60 mV/dec,以及更高的({I}_{ON}/{I}_{OFF})电流比 ~ 7.04 × 108,这与文献中报道的圆柱栅极器件(CGAA)相比要好得多。此外,研究还发现,就 SS、DIBL、\({I}_{ON}/{I}_{OFF}\)、\({g}_{m},\) TGF、fT、\(\tau\)、FTP 和\({R}_{SD+CH}\)而言,JL SiNW 器件的性能优于 IM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

DC and Analog/RF Performance Evaluation Using Dual Metal Gate Work Function Engineering of Junctionless Cylindrical Gate All Around Si Nanowire MOSFET Using NEGF Approach for Upcoming Sub 5 nm Technology Node

Present work investigates the DC and Analog/RF characteristics such as the drain current \(({I}_{D}\)), Transconductance \({(g}_{m})\), Transconductance Generation Factor (TGF), Cut-off frequency \({(f}_{T})\), Frequency Transconductance Product (FTP), Transit time \((\tau ),\) and the total resistance of the source region, drain region, and channel resistance \({(R}_{SD+CH})\) for Dual Metal (DM) Inversion Mode (IM) and Junctionless (JL) Cylindrical Gate All Around (CGAA) Silicon nanowire (SiNW) MOSFETs with 5 nm gate length using Silvaco ATLAS 3D TCAD. In this work, the Non-Equilibrium Green’s Function approach along with the self-consistent solution of Schrödinger’s equation and Poisson’s equation has been considered. The channel is taken to be lightly doped in the case of IM DM CGAA SiNW type of device. The effect of DM Gate work function engineering for SiNW channel of diameter 3 nm with gate oxide \(({SiO}_{2})\) the thickness of 0.8 nm on \({I}_{D}\),\({ g}_{m}\), TGF, \({f}_{T}\), \(\tau\), FTP and \({R}_{CH}\) has been studied. Moreover, a comparative study has been made between IMDM and JLDM CGAA SiNW devices with the above-mentioned parameters. For the JL device, the optimization of doping concentration is performed to get the same (i) ION current and (ii) threshold voltage (VTH) as the IM device. About 3.09 times and 21.89 times reduction in IOFF is seen for the same ION and VTH optimized devices respectively as compared to IM device. It has been found that DM Gate variation minimizes drain-induced barrier lowering (DIBL) in IM and JL devices. The JL SiNW showed much lower DIBL ~ 16.46 mV/V, a near ideal SS ~ 60 mV/dec, and higher \({I}_{ON}/{I}_{OFF}\) current ratio ~ 7.04 × 108 which is much better as compared to those reported in the literature for cylindrical gate all around (CGAA) devices. Also, it is found that the JL SiNW device performs better than IM in terms of SS, DIBL, \({I}_{ON}/{I}_{OFF}\), \({g}_{m},\) TGF, fT, \(\tau\), FTP and \({R}_{SD+CH}\).

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来源期刊
CiteScore
4.10
自引率
10.50%
发文量
115
审稿时长
3-6 weeks
期刊介绍: The International Journal of Precision Engineering and Manufacturing accepts original contributions on all aspects of precision engineering and manufacturing. The journal specific focus areas include, but are not limited to: - Precision Machining Processes - Manufacturing Systems - Robotics and Automation - Machine Tools - Design and Materials - Biomechanical Engineering - Nano/Micro Technology - Rapid Prototyping and Manufacturing - Measurements and Control Surveys and reviews will also be planned in consultation with the Editorial Board.
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