Porous GaP/g-C3N4 Photoanode for Enhanced Hydrogen Production

The g-C₃N₄ decorated porous gallium phosphide have been fabricated by a facile electrophoretic deposition (EPD) process. The morphology, element composition and light absorption of the GaP/g-C₃N₄ photoanode were observed using field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet and visible spectrophotometer, respectively. When acting as photoanode, porous GaP/g-C₃N₄ serves as a direct Z-scheme system, where photogenerated holes in GaP are expended by electrons generated from the g-C₃N₄, inhibiting the corrosion of GaP. Therefore, the porous GaP/g-C₃N₄ showed a larger photocurrent density, which is 2.1 times as large as that of the porous GaP without g-C₃N₄, and a more stable photocurrent density for over 10000 s (at 0 V vs RHE). Thus, this work delivers a practical way to improve the photoelectrochemical stability and property of III–V semiconductor materials, which could be used in solar energy conversion fields.