{"title":"静水压效应下 II 型 InGaN-ZnSnN2/GaN 量子阱中的浅捐献杂质态","authors":"Guang-Xin Wang, Xiu-Zhi Duan","doi":"10.1007/s40042-024-01095-7","DOIUrl":null,"url":null,"abstract":"<div><p>Taking into account the built-in electric field (BEF) effect, shallow-donor impurity (SDI) states in a strained type-II InGaN-ZnSnN<sub>2</sub>/GaN quantum well (QW) are investigated variationally under hydrostatic pressure. Numerical results reveal that the SDI binding energy and BEF strengths of different well and barrier layers depend on hydrostatic pressure and structural parameters of the type-II QW. The BEF strengths in left and right wells, middle barrier, and barriers on both sides are proportional to the hydrostatic pressure. Meantime, the BEF strengths in well and/or middle barrier layers (barriers on both sides) decrease (increase) linearly with increasing the width of the well and/or middle barrier layers (barriers on both sides). The binding energy displays a maximum value as the well width decreases, and it increases linearly (decreases gradually) with the increment in hydrostatic pressure (middle barrier thickness). Moreover, the position of an impurity ion has a significant impact on the SDI binding energy. It is hoped that the obtained results will be helpful in improving the physical performance of tunable type-II InGaN-ZnSnN<sub>2</sub>/GaN quantum wells (QWs) optical devices.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect\",\"authors\":\"Guang-Xin Wang, Xiu-Zhi Duan\",\"doi\":\"10.1007/s40042-024-01095-7\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Taking into account the built-in electric field (BEF) effect, shallow-donor impurity (SDI) states in a strained type-II InGaN-ZnSnN<sub>2</sub>/GaN quantum well (QW) are investigated variationally under hydrostatic pressure. Numerical results reveal that the SDI binding energy and BEF strengths of different well and barrier layers depend on hydrostatic pressure and structural parameters of the type-II QW. The BEF strengths in left and right wells, middle barrier, and barriers on both sides are proportional to the hydrostatic pressure. Meantime, the BEF strengths in well and/or middle barrier layers (barriers on both sides) decrease (increase) linearly with increasing the width of the well and/or middle barrier layers (barriers on both sides). The binding energy displays a maximum value as the well width decreases, and it increases linearly (decreases gradually) with the increment in hydrostatic pressure (middle barrier thickness). Moreover, the position of an impurity ion has a significant impact on the SDI binding energy. It is hoped that the obtained results will be helpful in improving the physical performance of tunable type-II InGaN-ZnSnN<sub>2</sub>/GaN quantum wells (QWs) optical devices.</p></div>\",\"PeriodicalId\":677,\"journal\":{\"name\":\"Journal of the Korean Physical Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2024-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Korean Physical Society\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s40042-024-01095-7\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-024-01095-7","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect
Taking into account the built-in electric field (BEF) effect, shallow-donor impurity (SDI) states in a strained type-II InGaN-ZnSnN2/GaN quantum well (QW) are investigated variationally under hydrostatic pressure. Numerical results reveal that the SDI binding energy and BEF strengths of different well and barrier layers depend on hydrostatic pressure and structural parameters of the type-II QW. The BEF strengths in left and right wells, middle barrier, and barriers on both sides are proportional to the hydrostatic pressure. Meantime, the BEF strengths in well and/or middle barrier layers (barriers on both sides) decrease (increase) linearly with increasing the width of the well and/or middle barrier layers (barriers on both sides). The binding energy displays a maximum value as the well width decreases, and it increases linearly (decreases gradually) with the increment in hydrostatic pressure (middle barrier thickness). Moreover, the position of an impurity ion has a significant impact on the SDI binding energy. It is hoped that the obtained results will be helpful in improving the physical performance of tunable type-II InGaN-ZnSnN2/GaN quantum wells (QWs) optical devices.
期刊介绍:
The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.