静水压效应下 II 型 InGaN-ZnSnN2/GaN 量子阱中的浅捐献杂质态

IF 0.8 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY
Guang-Xin Wang, Xiu-Zhi Duan
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引用次数: 0

摘要

考虑到内置电场(BEF)效应,在静水压力下对应变 II 型 InGaN-ZnSnN2/GaN 量子阱(QW)中的浅捐献杂质(SDI)态进行了变化研究。数值结果表明,不同阱层和势垒层的 SDI 结合能和 BEF 强度取决于静水压力和 II 型 QW 的结构参数。左右井、中间势垒和两侧势垒的 BEF 强度与静水压力成正比。同时,井和/或中间势垒层(两侧势垒)中的 BEF 强度随井和/或中间势垒层(两侧势垒)宽度的增加而线性降低(增加)。当井宽度减小时,结合能显示出最大值,并且随着静水压力(中间阻挡层厚度)的增加而线性增加(逐渐减小)。此外,杂质离子的位置对 SDI 结合能也有很大影响。希望所获得的结果有助于提高可调谐的 InGaN-ZnSnN2/GaN 量子阱(QWs)光学器件的物理性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect

Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect

Shallow-donor impurity states in type-II InGaN-ZnSnN2/GaN quantum wells under hydrostatic pressure effect

Taking into account the built-in electric field (BEF) effect, shallow-donor impurity (SDI) states in a strained type-II InGaN-ZnSnN2/GaN quantum well (QW) are investigated variationally under hydrostatic pressure. Numerical results reveal that the SDI binding energy and BEF strengths of different well and barrier layers depend on hydrostatic pressure and structural parameters of the type-II QW. The BEF strengths in left and right wells, middle barrier, and barriers on both sides are proportional to the hydrostatic pressure. Meantime, the BEF strengths in well and/or middle barrier layers (barriers on both sides) decrease (increase) linearly with increasing the width of the well and/or middle barrier layers (barriers on both sides). The binding energy displays a maximum value as the well width decreases, and it increases linearly (decreases gradually) with the increment in hydrostatic pressure (middle barrier thickness). Moreover, the position of an impurity ion has a significant impact on the SDI binding energy. It is hoped that the obtained results will be helpful in improving the physical performance of tunable type-II InGaN-ZnSnN2/GaN quantum wells (QWs) optical devices.

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来源期刊
Journal of the Korean Physical Society
Journal of the Korean Physical Society PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.20
自引率
16.70%
发文量
276
审稿时长
5.5 months
期刊介绍: The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
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