Concentration Profile of the Gallium and Antimony Impurities in the Ge1–x–Six〈Ga〉 and Ge1–x–Six〈Sb〉 Crystals Grown by the Hybrid Method

The doped crystals of the Ge_1–x–Si_x〈Ga〉 and Ge_1–x–Si_x〈Sb〉 solid solutions have been prepared by the hybrid method. The Hall measurements have been carried out on the samples at room temperature, from which the distributions of gallium and antimony impurities along the prepared crystals of Ge_1–x–Si_x〈Ga〉 and Ge_1–x–Si_x〈Sb〉, respectively, have been determined experimentally. At the same time, in the Pfann approximation, the one-dimensional problem on the axial distribution of the gallium and antimony impurities in crystals of the Ge–Si solid solutions grown by the hybrid method has been solved. The results obtained demonstrate good agreement between experimental and calculated data. This fact allows us to conclude, that mathematical modeling gives an opportunity to control, over a wide range, the concentration profile of impurities in the Ge–Si crystals grown by this method by changing the starting concentrations of impurities and creating the respective gradient of temperature in the melt in the section of crystal growth by the directional constitutional supercooling of the melt method and the ratio of the replenishment and crystallization rates of the melt in the section of the homogeneous crystal growth.