VO2 薄膜随温度变化的残余应力和热膨胀系数

C. Tien, Chun-Yu Chiang, Ching-Chiun Wang, Shih-Chin Lin
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引用次数: 0

摘要

本研究旨在探讨二氧化钒(VO2)薄膜的热力学特性。通过电子束蒸发和离子辅助沉积,在 B270 和 H-K9L 玻璃基底上同时沉积了二氧化钒薄膜。基于光学干涉测量法,可以确定 VO2 薄膜的热机械行为和热应力。使用改进的 Twyman-Green 干涉仪测量了 VO2 薄膜在不同温度下随温度变化的残余应力。研究发现,基底对热应力的影响很大,这主要是由于薄膜和基底的热膨胀系数(CTE)不匹配造成的。通过使用双基底法,可以评估 VO2 薄膜从室温到 120 °C 的热应力。热膨胀系数为 3.21 × 10-5 °C-1 ,双轴模量为 517 GPa。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature-Dependent Residual Stresses and Thermal Expansion Coefficient of VO2 Thin Films
This study aims to investigate the thermomechanical properties of vanadium dioxide (VO2) thin films. A VO2 thin film was simultaneously deposited on B270 and H-K9L glass substrates by electron-beam evaporation with ion-assisted deposition. Based on optical interferometric methods, the thermal–mechanical behavior of and thermal stresses in VO2 films can be determined. An improved Twyman–Green interferometer was used to measure the temperature-dependent residual stress variations of VO2 thin films at different temperatures. This study found that the substrate has a great impact on thermal stress, which is mainly caused by the mismatch in the coefficient of thermal expansion (CTE) of the film and the substrate. By using the dual-substrate method, thermal stresses in VO2 thin films from room temperature to 120 °C can be evaluated. The thermal expansion coefficient is 3.21 × 10−5 °C−1, and the biaxial modulus is 517 GPa.
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