M. Woźny, Wojciech Szuszkiewicz, M. Dyksik, Marcin Motyka, A. Szczerbakow, W. Bardyszewski, Tomasz Story, Józef Cebulski
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引用次数: 0
摘要
在太赫兹光谱区测量了 n 型 Pb0.865Sn0.135Se 和 Pb0.75Sn0.25Se 固溶体的光学反射率,该光谱区的能量与光学声子激发相对应,温度范围从 40 K 到 280 K。在动态介电函数形式主义下对 Pb0.75Sn0.25Se 数据进行的分析表明,LO 声子频率的温度依赖性存在类似共振的异常。LO 声子能量重正化公式再现了能隙等于零时观察到的异常,相变发生在 T0 = (172 ± 2) K。目前的结果表明,在 LO 声子频率附近的太赫兹范围内进行反射率测量是精确测定窄隙拓扑材料带反转温度的重要实验方法。
Electron-phonon coupling and a resonant-like optical observation of a band inversion in topological crystal insulator Pb1-xSnxSe
The optical reflectivity of n-type Pb0.865Sn0.135Se and Pb0.75Sn0.25Se solid solutions was measured in the THz spectral region energetically corresponding to optical phonon excitations and in the temperature range from 40 K to 280 K. The first solid solution exhibits an open energy gap with trivial band ordering at all temperatures, while for the second one the transition from trivial insulator to topological crystal insulator phase is expected. The analysis of Pb0.75Sn0.25Se data performed within the dynamic dielectric function formalism revealed an anomaly of resonance-like character in the temperature dependence of LO phonon frequency. The formula for LO phonon energy renormalization reproduced observed anomaly for energy gap equal to zero, the phase transition occurred at T0 = (172 ± 2) K. This effect was absent for Pb0.865Sn0.135Se. Present results show that reflectivity measurements in the THz range in the vicinity of LO phonon frequency can be valuable experimental method for precise determining of band inversion temperature in narrow-gap topological materials.