掺杂 Yb2+ 的 CsI 单晶的晶体生长与光谱学

Crystals Pub Date : 2024-05-24 DOI:10.3390/cryst14060500
Dmitriy Sofich, Alexandra Myasnikova, A. Bogdanov, Viktorija Pankratova, V. Pankratov, Ekaterina Kaneva, Roman Shendrik
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摘要

生长出了 CsI-Yb2+ 的单晶体,并对其进行了光谱研究。在 CsI-Yb2+ 中观察到的发光是由于 Yb2+ 离子的 5d-4f 转变。利用时间分辨光谱法,发现了室温下镱离子的自旋允许和自旋禁止辐射跃迁。在 3-45 eV 范围内获得了 Yb2+ 发光带的激发光谱。此外,还研究了 CsI 晶体中 Yb2+ 离子的电荷补偿机制,测量了热刺激去极化电流的光谱,并计算了观察到的两个峰的活化能。这些峰属于两个不同位置的杂质-空位复合物。Yb2+ 的电荷补偿是通过最近邻位和次最近邻位的阳离子空位实现的。Yb2+ 离子是很有前途的掺杂剂,可用于 CsI 闪烁器和与 SiPM 光电探测器相结合的 X 射线荧光粉。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Crystal Growth and Spectroscopy of Yb2+-Doped CsI Single Crystal
The single crystals of CsI-Yb2+ were grown, and their spectroscopic studies were conducted. The observed luminescence in CsI-Yb2+ is due to 5d–4f transitions in Yb2+ ions. Using time-resolved spectroscopy, spin-allowed and spin-forbidden radiative transitions of ytterbium ions at room temperature were found. The excitation spectra of Yb2+ luminescence bands were obtained in the range of 3–45 eV. The mechanism of charge compensation of Yb2+ ions in a CsI crystal was also studied, the spectrum of the thermally stimulated depolarization current was measured, and the activation energies of the two observed peaks were calculated. These peaks belong to impurity–vacancy complexes in two different positions. The charge compensation of Yb2+ occurs via cation vacancies in the nearest-neighbor and next-nearest-neighbor positions.The Yb2+ ions are promising dopants for CsI scintillators and X-ray phosphors in combination with SiPM photodetectors.
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