Ricardo E. Marotti , Claudia D. Bojorge , Horacio R. Cánepa , Juan A. Badán , Enrique A. Dalchiele
{"title":"纳米结构掺铝氧化锌薄膜的吸收边移动和展宽","authors":"Ricardo E. Marotti , Claudia D. Bojorge , Horacio R. Cánepa , Juan A. Badán , Enrique A. Dalchiele","doi":"10.1016/j.physe.2024.116008","DOIUrl":null,"url":null,"abstract":"<div><p>Samples of ZnO were prepared by sol-gel and deposited by dip-coating. The influence of synthesis conditions on the optical properties were studied in different sets of ZnO films, synthesized by alternately varying the following parameters: addition of additives to the precursor solution, Al doping percentage and number of layers. The optical properties of the obtained films were studied by transmittance, being typically >90 % at 600 nm. The absorption edge for undoped samples showed a structure due to exciton formation at room temperature. The bandgap energy <em>E</em><sub>g</sub>, was between (3.227 ± 0.010) eV and (3.275 ± 0.010) eV for undoped samples, increasing to (3.352 ± 0.010) eV for Al doped ones (10 % Al/Zn in solution with additives). For intermediate 5 % doping the mean bandgap energy was (3.315 ± 0.015) eV. A similar value (3.320 eV ± 0.010) eV was obtained for 10 % Al/Zn when no additives were included. Doped samples showed a smoother absorption edge. This edge shape evolution was studied by Urbach band tail analysis. The Urbach band tail parameter <em>E</em><sub>U</sub> increased with doping, varying from 30 meV to 90 meV and increasing as <em>E</em><sub>g</sub> increases. This correlation describes the influence of impurity states in the structure and optical properties of the material.</p></div>","PeriodicalId":20181,"journal":{"name":"Physica E-low-dimensional Systems & Nanostructures","volume":null,"pages":null},"PeriodicalIF":2.9000,"publicationDate":"2024-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Absorption edge shift and broadening in nanostructured Al doped ZnO thin films\",\"authors\":\"Ricardo E. Marotti , Claudia D. Bojorge , Horacio R. Cánepa , Juan A. Badán , Enrique A. Dalchiele\",\"doi\":\"10.1016/j.physe.2024.116008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Samples of ZnO were prepared by sol-gel and deposited by dip-coating. The influence of synthesis conditions on the optical properties were studied in different sets of ZnO films, synthesized by alternately varying the following parameters: addition of additives to the precursor solution, Al doping percentage and number of layers. The optical properties of the obtained films were studied by transmittance, being typically >90 % at 600 nm. The absorption edge for undoped samples showed a structure due to exciton formation at room temperature. The bandgap energy <em>E</em><sub>g</sub>, was between (3.227 ± 0.010) eV and (3.275 ± 0.010) eV for undoped samples, increasing to (3.352 ± 0.010) eV for Al doped ones (10 % Al/Zn in solution with additives). For intermediate 5 % doping the mean bandgap energy was (3.315 ± 0.015) eV. A similar value (3.320 eV ± 0.010) eV was obtained for 10 % Al/Zn when no additives were included. Doped samples showed a smoother absorption edge. This edge shape evolution was studied by Urbach band tail analysis. The Urbach band tail parameter <em>E</em><sub>U</sub> increased with doping, varying from 30 meV to 90 meV and increasing as <em>E</em><sub>g</sub> increases. This correlation describes the influence of impurity states in the structure and optical properties of the material.</p></div>\",\"PeriodicalId\":20181,\"journal\":{\"name\":\"Physica E-low-dimensional Systems & Nanostructures\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica E-low-dimensional Systems & Nanostructures\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1386947724001127\",\"RegionNum\":3,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"NANOSCIENCE & NANOTECHNOLOGY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica E-low-dimensional Systems & Nanostructures","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1386947724001127","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"NANOSCIENCE & NANOTECHNOLOGY","Score":null,"Total":0}
Absorption edge shift and broadening in nanostructured Al doped ZnO thin films
Samples of ZnO were prepared by sol-gel and deposited by dip-coating. The influence of synthesis conditions on the optical properties were studied in different sets of ZnO films, synthesized by alternately varying the following parameters: addition of additives to the precursor solution, Al doping percentage and number of layers. The optical properties of the obtained films were studied by transmittance, being typically >90 % at 600 nm. The absorption edge for undoped samples showed a structure due to exciton formation at room temperature. The bandgap energy Eg, was between (3.227 ± 0.010) eV and (3.275 ± 0.010) eV for undoped samples, increasing to (3.352 ± 0.010) eV for Al doped ones (10 % Al/Zn in solution with additives). For intermediate 5 % doping the mean bandgap energy was (3.315 ± 0.015) eV. A similar value (3.320 eV ± 0.010) eV was obtained for 10 % Al/Zn when no additives were included. Doped samples showed a smoother absorption edge. This edge shape evolution was studied by Urbach band tail analysis. The Urbach band tail parameter EU increased with doping, varying from 30 meV to 90 meV and increasing as Eg increases. This correlation describes the influence of impurity states in the structure and optical properties of the material.
期刊介绍:
Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals.
Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena.
Keywords:
• topological insulators/superconductors, majorana fermions, Wyel semimetals;
• quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems;
• layered superconductivity, low dimensional systems with superconducting proximity effect;
• 2D materials such as transition metal dichalcogenides;
• oxide heterostructures including ZnO, SrTiO3 etc;
• carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.)
• quantum wells and superlattices;
• quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect;
• optical- and phonons-related phenomena;
• magnetic-semiconductor structures;
• charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling;
• ultra-fast nonlinear optical phenomena;
• novel devices and applications (such as high performance sensor, solar cell, etc);
• novel growth and fabrication techniques for nanostructures