在纳米级沟槽图案上电沉积 Ru

Youjung Kim, Jinhyun Lee, Jin-Kyo Seo, H. Han, Inseong Hwang, S. Yoon, Bongyoung Yoo
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引用次数: 0

摘要

先进技术节点中的 Ru 沉积可在纳米级特征中提供低电阻,从而提高性能。在这项研究中,我们使用多循环伏安法(CV)报告了 Ru 表面上 Ru3+ 的电化学反应,并使用线性扫描伏安法(LSV)和恒电位测量法报告了 Ru 电沉积过程中添加剂的行为。我们添加了 3,3'-二硫双(1-丙烷磺酸钠)(SPS)、聚乙烯吡咯烷酮(PVP)和溴离子(Br-)进行自下而上的填充。我们研究了 PVP 的抑制行为。抑制剂击穿的电流密度和起始电位受抑制剂浓度的影响。PVP 与 Br- 起着协同作用,并显示出额外的抑制作用。在形成溴化层后,PVP 与 Br- 形成抑制层。SPS 可以降低电沉积 Ru 过程中的粗糙度。基于这些结果,使用优化的添加剂条件在纳米沟槽中填充了 Ru。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrodeposition of Ru on Nanoscale Trench Patterns
Ru deposition in advanced technology nodes can improve performance by providing low resistance in nanoscale features. In this study, we reported the electrochemical reactions of Ru3+ on an Ru surface using multi-cyclic voltammetry (CV) and behavior of additives during Ru electrodeposition using linear sweep voltammetry (LSV) and potentiostatic measurements. Disodium 3,3'-dithiobis(1-propanesulfonate) (SPS), polyvinylpyrrolidone (PVP), and a bromide ion (Br-) were added for bottom-up filling. We investigated the suppression behavior of PVP. The current density and the onset potential of suppressor breakdown were affected by the suppressor concentration. PVP interacted synergistically with Br- and showed additional suppression. PVP formed a suppressing layer with Br- after formation of a bromide layer. SPS could reduce roughness during electrodeposition of Ru. Based on these results, nano-trenches were filled with Ru using the optimized additive condition.
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