Negative Dielectric Constant in Novel Structure of PA-GO Composite /MnO2/Fe3O4/n-Si

We present a novel structure of PA-GO composite /MnO2/Fe3O4/n-Si arranged by simple technique and examined by scanning electron microscope, X-ray diffraction, and Raman spectroscopy. The negative dielectric constant appeared for all voltages at frequencies of 103, 102, 10 Hz, proving that the dielectric constant has negative values only at frequencies above one megahertz 106Hz. Also, the dielectric loss has negative values with temperature at all voltages and high frequencies. This structure also has a low dielectric loss tangent from 4 to 50 with all voltages and temperatures and high rectification ratio reach to 1200 times, and high Rj. The performance of dielectric constant, dielectric loss, and dielectric loss tangent depend on the change of frequencies and voltages. The electrical properties of this structure were examined by conventional, dv/dlnI, and the Nord and Cheung method. The ideality factor fluctuates between 3.09 and 3.29, and the barrier height is in the range of 0.56 to 0.58 at room temperature. We found similar results using different methods of measuring the electrical properties. This indicates that the structure is a promising material for preparing diodes, supercapacitor, and high storage devices.