Bohan Wei, Yun Li, Tinghe Yun, Yang Li, Tianhu Gui, Wenzhi Yu, Haoran Mu, Nan Cui, Weiqiang Chen, Shenghuang Lin
{"title":"二维晶体管中作为范德华接触夹层的三重畸变半金属 PtBi2","authors":"Bohan Wei, Yun Li, Tinghe Yun, Yang Li, Tianhu Gui, Wenzhi Yu, Haoran Mu, Nan Cui, Weiqiang Chen, Shenghuang Lin","doi":"10.1088/2752-5724/ad47cf","DOIUrl":null,"url":null,"abstract":"\n The low-energy electronic excitations in topological semimetal yield a plethora of a range of novel physical properties. As a relatively scarce branch, the research of triple degenerate semi-metal is mostly confined to the stage of physical properties and theoretical analysis, there are still challenges in its practical application. This research showcases the first application of the triply degenerate semimetal PtBi2 in electronic devices. Leveraging a van der Waals transfer method, PtBi2 flakes were used as interlayer contacts for metal electrodes and WS2 in transistors. The transistor achieved a switching ratio above 106 and average mobility can reach 85 cm2V-1s-1, meeting integrated circuit requirements. Notably, the excellent air stability of PtBi2 simplifies the device preparation process and provides more stable device performance. Transfer process reduces the Schottky barrier between metal electrodes and semiconductors while avoiding Fermi pinning during metal deposition to achieve excellent contact. This groundbreaking work demonstrates the practical applicability of PtBi2 in the field of electronic devices while opening new avenues for the integration of novel materials in semiconductor technology, setting a precedent for future innovations.","PeriodicalId":221966,"journal":{"name":"Materials Futures","volume":"37 10","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Triply Degenerate Semimetal PtBi2 as van der Waals Contact interlayer in Two-Dimensional Transistor\",\"authors\":\"Bohan Wei, Yun Li, Tinghe Yun, Yang Li, Tianhu Gui, Wenzhi Yu, Haoran Mu, Nan Cui, Weiqiang Chen, Shenghuang Lin\",\"doi\":\"10.1088/2752-5724/ad47cf\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n The low-energy electronic excitations in topological semimetal yield a plethora of a range of novel physical properties. As a relatively scarce branch, the research of triple degenerate semi-metal is mostly confined to the stage of physical properties and theoretical analysis, there are still challenges in its practical application. This research showcases the first application of the triply degenerate semimetal PtBi2 in electronic devices. Leveraging a van der Waals transfer method, PtBi2 flakes were used as interlayer contacts for metal electrodes and WS2 in transistors. The transistor achieved a switching ratio above 106 and average mobility can reach 85 cm2V-1s-1, meeting integrated circuit requirements. Notably, the excellent air stability of PtBi2 simplifies the device preparation process and provides more stable device performance. Transfer process reduces the Schottky barrier between metal electrodes and semiconductors while avoiding Fermi pinning during metal deposition to achieve excellent contact. This groundbreaking work demonstrates the practical applicability of PtBi2 in the field of electronic devices while opening new avenues for the integration of novel materials in semiconductor technology, setting a precedent for future innovations.\",\"PeriodicalId\":221966,\"journal\":{\"name\":\"Materials Futures\",\"volume\":\"37 10\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Futures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/2752-5724/ad47cf\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Futures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2752-5724/ad47cf","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Triply Degenerate Semimetal PtBi2 as van der Waals Contact interlayer in Two-Dimensional Transistor
The low-energy electronic excitations in topological semimetal yield a plethora of a range of novel physical properties. As a relatively scarce branch, the research of triple degenerate semi-metal is mostly confined to the stage of physical properties and theoretical analysis, there are still challenges in its practical application. This research showcases the first application of the triply degenerate semimetal PtBi2 in electronic devices. Leveraging a van der Waals transfer method, PtBi2 flakes were used as interlayer contacts for metal electrodes and WS2 in transistors. The transistor achieved a switching ratio above 106 and average mobility can reach 85 cm2V-1s-1, meeting integrated circuit requirements. Notably, the excellent air stability of PtBi2 simplifies the device preparation process and provides more stable device performance. Transfer process reduces the Schottky barrier between metal electrodes and semiconductors while avoiding Fermi pinning during metal deposition to achieve excellent contact. This groundbreaking work demonstrates the practical applicability of PtBi2 in the field of electronic devices while opening new avenues for the integration of novel materials in semiconductor technology, setting a precedent for future innovations.