4H-SiC 上 GaAs (111) 的外延生长与表征

Subhashis Das, Nirosh M. Eldose, H. Stanchu, Fernando Maia de Oliveira, M. Benamara, Yuriy I. Mazur, Zhong Chen, Alan Mantooth, Gregory J. Salamo
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摘要

碳化硅(SiC)是一种间接带隙半导体,其材料特性非常适合用于电力电子设备,但不太适合用作光学发射器。与此同时,砷化镓(GaAs)因其直接带隙和载流子寿命而成为高性能光学设备的理想材料。将砷化镓与碳化硅(SiC)集成在一起,可以获得两种材料的最佳效果。然而,由于这两种材料之间存在较大的晶格不匹配,因此将二者整合在一起是一项巨大的挑战。在本文中,我们研究了在 4H-SiC 和 AlAs/4H-SiC 衬底上直接生长高质量砷化镓的情况。我们使用 X 射线衍射、原子力显微镜和光致发光 (PL) 光谱等结构和光学分析的关键技术对薄膜进行了表征。砷化镓直接在碳化硅上生长的三维孤岛性质导致其与基底的面内相关性很弱,但光致发光却很高。观察到的 PL 强度与具有类似缓冲层的砷化镓基底观察到的 PL 强度相当,证明了这一点。引入薄薄的 AlAs 成核层可改善基底的润湿性,提高与基底的面内相关性,并全面提高结晶质量,目前正在进一步研究中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Epitaxial growth and characterization of GaAs (111) on 4H-SiC
SiC is an indirect bandgap semiconductor with material properties ideal for power electronics but not so much as an optical emitter. Meanwhile, gallium arsenide (GaAs) is a material known for high-performance optical devices due to its direct bandgap and carrier lifetime. Integrating GaAs with silicon carbide (SiC) can result in the best of both materials. However, integrating the two presents a significant challenge due to the large lattice mismatch between the two materials. In this paper, we investigate the growth of high-quality GaAs directly on 4H-SiC and on AlAs/4H-SiC substrates. The thin films were characterized using key techniques for structural and optical analyses, such as x-ray diffraction, atomic force microscopy, and photoluminescence (PL) spectroscopy. The 3D-island nature of growth of GaAs directly on SiC results in weak in-plane correlation with the substrate but high photoluminescence. This was demonstrated with an observed PL intensity comparable to the PL observed from a GaAs substrate with a similar buffer layer. Introduction of a thin AlAs nucleation layer results in improved wetting of the substrate, better in-plane correlation with substrate, and overall improved crystalline quality and is now under further study.
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