研究在 FinFET 中使用不同材料的栅极绝缘层对短沟道效应的抑制作用

Haotian Yu
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引用次数: 0

摘要

随着 FinFET 技术的不断发展,SiO2 等传统栅极绝缘体材料在满足现代应用需求方面面临挑战,尤其是在栅极漏电流控制方面。介电常数更高的材料,尤其是 HfO2 和 Si3N4,正成为替代 SiO2 的有力竞争者,引起半导体界的极大关注。利用 Silvaco TCAD 等工具的先进功能,通过量子实例三维 FinFET 模型,对 SiO2、HfO2 和 Si3N4 的性能和栅极漏电流控制能力进行了深入分析比较。研究结果不仅突出了 HfO2 和 Si3N4 作为二氧化硅替代品的潜力,还强调了二氧化硅的独特优势,使其特别适合作为替代品。这种探索不仅仅是对材料进行比较。它深入了解了它们在各种操作条件下的行为,为潜在的突破奠定了基础,并促进了半导体技术的下一波创新。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigating the inhibition of short channel effects using different materials of gate insulator layers in FinFET
As the evolution of FinFET technology continues, traditional gate insulator materials, such as SiO2, face challenges in meeting the demands of modern applications, especially when it comes to gate leakage current control. Emerging as promising contenders to replace SiO2, materials with higher dielectric constants, notably HfO2 and Si3N4, are drawing significant attention in the semiconductor community. Leveraging the advanced capabilities of tools like Silvaco TCAD, an in-depth analysis was conducted to compare the performance and gate leakage current control abilities of SiO2, HfO2, and Si3N4, utilizing the Quantum examples 3D FinFET model. The findings not only highlight the potential of HfO2 and Si3N4 as worthy replacements for SiO2 but also accentuate the distinct advantages of SiO2, making it particularly well-suited as a substitute. This exploration goes beyond a mere comparison of materials. It dives deep into understanding their behaviors under various operational conditions, laying a foundation for potential breakthroughs and fostering the next wave of innovations in semiconductor technology.
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