氧化钒层在缺氧条件下 Sr2VFeAsO3-δ 电子状态中的作用

Masamichi Nakajima, H. Yokota, Taihei Wakimura, Tetsuya Takeuchi, Koya Nakamura, M. Yashima, H. Mukuda, Shigeki Miyasaka, Setsuko Tajima
{"title":"氧化钒层在缺氧条件下 Sr2VFeAsO3-δ 电子状态中的作用","authors":"Masamichi Nakajima, H. Yokota, Taihei Wakimura, Tetsuya Takeuchi, Koya Nakamura, M. Yashima, H. Mukuda, Shigeki Miyasaka, Setsuko Tajima","doi":"10.7566/JPSJ.93.054711","DOIUrl":null,"url":null,"abstract":"Iron-based superconductor Sr$_2$VFeAsO$_3$ is composed of alternate stacking of a superconducting FeAs layer and an insulating vanadium-oxide layer with a perovskite-type structure. Electronic orders stemming from the spin and orbital degrees of freedom of V $3d$ electrons can arise in the vanadium-oxide layer, but such orders have not been confirmed so far. Here, we systematically investigate the electronic state of Sr$_2$VFeAsO$_{3-\\delta}$ with oxygen deficiency and demonstrate the phase diagram of Sr$_2$VFeAsO$_{3-\\delta}$ as a function of the $c$-axis lattice parameter, which has turned out to be a suitable measure of the amount of oxygen deficiency. We found a magnetic and structural anomaly at $\\sim 100$ K with a thermal hysteresis, which is manifested with the introduction of oxygen deficiency. The presence of orthorhombic distortion was revealed below the temperature at which the anomaly appears, suggestive of V orbital ordering involving the $d_{xz}$ and $d_{yz}$ orbitals. It seems that substantial fluctuations associated with the orthorhombic distortion significantly influence the electronic state of the FeAs layer. Our findings indicate that the vanadium-oxide layer plays a significant role in the electronic state of Sr$_2$VFeAsO$_{3-\\delta}$.","PeriodicalId":509167,"journal":{"name":"Journal of the Physical Society of Japan","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Role of Vanadium-Oxide Layer in Electronic State of Sr2VFeAsO3−δ with Oxygen Deficiency\",\"authors\":\"Masamichi Nakajima, H. Yokota, Taihei Wakimura, Tetsuya Takeuchi, Koya Nakamura, M. Yashima, H. Mukuda, Shigeki Miyasaka, Setsuko Tajima\",\"doi\":\"10.7566/JPSJ.93.054711\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Iron-based superconductor Sr$_2$VFeAsO$_3$ is composed of alternate stacking of a superconducting FeAs layer and an insulating vanadium-oxide layer with a perovskite-type structure. Electronic orders stemming from the spin and orbital degrees of freedom of V $3d$ electrons can arise in the vanadium-oxide layer, but such orders have not been confirmed so far. Here, we systematically investigate the electronic state of Sr$_2$VFeAsO$_{3-\\\\delta}$ with oxygen deficiency and demonstrate the phase diagram of Sr$_2$VFeAsO$_{3-\\\\delta}$ as a function of the $c$-axis lattice parameter, which has turned out to be a suitable measure of the amount of oxygen deficiency. We found a magnetic and structural anomaly at $\\\\sim 100$ K with a thermal hysteresis, which is manifested with the introduction of oxygen deficiency. The presence of orthorhombic distortion was revealed below the temperature at which the anomaly appears, suggestive of V orbital ordering involving the $d_{xz}$ and $d_{yz}$ orbitals. It seems that substantial fluctuations associated with the orthorhombic distortion significantly influence the electronic state of the FeAs layer. Our findings indicate that the vanadium-oxide layer plays a significant role in the electronic state of Sr$_2$VFeAsO$_{3-\\\\delta}$.\",\"PeriodicalId\":509167,\"journal\":{\"name\":\"Journal of the Physical Society of Japan\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of the Physical Society of Japan\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.7566/JPSJ.93.054711\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Physical Society of Japan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.7566/JPSJ.93.054711","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

铁基超导体 Sr$_2$VFeAsO$_3$ 由超导砷化镓层和绝缘氧化钒层交替堆叠组成,具有包晶型结构。氧化钒层中可能会出现源于 V 3d$ 电子自旋和轨道自由度的电子阶,但这种阶至今尚未得到证实。在此,我们系统地研究了缺氧情况下 Sr$_2$VFeAsO$_{3-\delta}$ 的电子态,并展示了 Sr$_2$VFeAsO$_{3-\delta}$ 的相图与 c$ 轴晶格参数的函数关系,而 c$ 轴晶格参数被证明是缺氧量的合适测量值。我们发现在 $\sim 100$ K 时存在磁性和结构异常,并伴有热滞后,这在引入缺氧后表现出来。在异常出现的温度以下,发现了正交畸变的存在,这表明涉及 $d_{xz}$ 和 $d_{yz}$ 轨道的 V 轨道有序化。看来,与正交畸变相关的大幅波动对砷化钒层的电子状态有重大影响。我们的研究结果表明,氧化钒层在 Sr$_2$VeAsO$_{3-\delta}$ 的电子状态中起着重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Role of Vanadium-Oxide Layer in Electronic State of Sr2VFeAsO3−δ with Oxygen Deficiency
Iron-based superconductor Sr$_2$VFeAsO$_3$ is composed of alternate stacking of a superconducting FeAs layer and an insulating vanadium-oxide layer with a perovskite-type structure. Electronic orders stemming from the spin and orbital degrees of freedom of V $3d$ electrons can arise in the vanadium-oxide layer, but such orders have not been confirmed so far. Here, we systematically investigate the electronic state of Sr$_2$VFeAsO$_{3-\delta}$ with oxygen deficiency and demonstrate the phase diagram of Sr$_2$VFeAsO$_{3-\delta}$ as a function of the $c$-axis lattice parameter, which has turned out to be a suitable measure of the amount of oxygen deficiency. We found a magnetic and structural anomaly at $\sim 100$ K with a thermal hysteresis, which is manifested with the introduction of oxygen deficiency. The presence of orthorhombic distortion was revealed below the temperature at which the anomaly appears, suggestive of V orbital ordering involving the $d_{xz}$ and $d_{yz}$ orbitals. It seems that substantial fluctuations associated with the orthorhombic distortion significantly influence the electronic state of the FeAs layer. Our findings indicate that the vanadium-oxide layer plays a significant role in the electronic state of Sr$_2$VFeAsO$_{3-\delta}$.
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