Shuai Zhang, Tong Liu, Jianxiao Wang, Yongfu Li, Guoqing Lin, Maria Vasilopoulou, Junhao Chu, Qingbo Meng, Xichang Bao
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The PM6:PC<sub>71</sub>BM-based OPDs are capable of significantly suppressing <i>J</i><sub>d</sub> while increasing <i>R</i>, which can be attributed to the multiple optimizations of morphology and charge transport caused by the addition of PAEN. As a result, the value of <i>J</i><sub>d</sub> (3.63 × 10<sup>−10</sup> A cm<sup>−2</sup>) is two orders of magnitude lower than that of the device without PAEN (1.00 × 10<sup>−8</sup> A cm<sup>−2</sup>) at −1 V bias. Combined with the increased <i>R</i> of 0.376 A W<sup>−1</sup>, the optimized device achieves a high <i>D</i>*of 3.45 × 10<sup>13</sup> Jones (−1 V at 620 nm). 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引用次数: 0
摘要
有机光电探测器(OPD)作为可溶液加工的光信号捕获器件,具有多种优势,如响应范围可调、微弱光响应出色、重量轻、灵活性强、易于在各种基底上加工等,因而引起了人们的极大兴趣。低暗电流密度(Jd)和高响应率(R)是实现高特定检测率(D*)的关键要求。本文报告了一种通过在有机光敏层中引入绝缘聚(芳基醚)(PAEN)来制备具有潜在微 pi-n 结构的高性能 OPD 的有效策略。基于 PM6:PC71BM 的 OPD 能够在增加 R 的同时显著抑制 Jd,这归功于 PAEN 的加入对形态和电荷传输的多重优化。因此,在 -1 V 偏压下,Jd 值(3.63 × 10-10 A cm-2)比没有 PAEN 的器件(1.00 × 10-8 A cm-2)低两个数量级。再加上增加的 0.376 A W-1 R,优化后的器件实现了 3.45 × 1013 Jones 的高 D*(-1 V,620 nm 时)。优化后的 OPD 表现出与商用硅光电探测器(Hamamatsu S1133)相当的高性能,为这种经济高效的有机光电探测技术直接进入市场铺平了道路。
Effective Strategy for High-Performance Organic Photodetectors with Significantly Suppressed Dark Current and Improved Responsivity
Organic photodetectors (OPDs) have attracted immense interest as solution-processable optical signal-capturing devices due to their various advantages, such as adjustable response range, excellent weak light response, lightweight, flexibility, and ease of processing on diverse substrates. Low dark current density (Jd) and high responsivity (R) are key requirements necessary for achieving a high specific detectivity (D*). Here, an effective strategy for preparing high-performance OPDs with potential micro p-i-n structure by introducing insulating poly(aryl ether) (PAEN) into the organic photosensitive layer is reported. The PM6:PC71BM-based OPDs are capable of significantly suppressing Jd while increasing R, which can be attributed to the multiple optimizations of morphology and charge transport caused by the addition of PAEN. As a result, the value of Jd (3.63 × 10−10 A cm−2) is two orders of magnitude lower than that of the device without PAEN (1.00 × 10−8 A cm−2) at −1 V bias. Combined with the increased R of 0.376 A W−1, the optimized device achieves a high D*of 3.45 × 1013 Jones (−1 V at 620 nm). The optimized OPDs demonstrate high performance that is comparable to commercial Si photodetectors (Hamamatsu S1133), paving the way for the direct market development of this cost-effective organic photodetection technology.
期刊介绍:
Advanced Optical Materials, part of the esteemed Advanced portfolio, is a unique materials science journal concentrating on all facets of light-matter interactions. For over a decade, it has been the preferred optical materials journal for significant discoveries in photonics, plasmonics, metamaterials, and more. The Advanced portfolio from Wiley is a collection of globally respected, high-impact journals that disseminate the best science from established and emerging researchers, aiding them in fulfilling their mission and amplifying the reach of their scientific discoveries.