UiO-66-Hf 金属有机框架中的功能调制器和缺失连接体缺陷实现了高质子传导性

IF 2.6 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
CrystEngComm Pub Date : 2024-05-14 DOI:10.1039/D4CE00164H
Fang Fang, Peng Wang, Zhen Zhang, Suo-Shu Zhang, Yuan-Yuan Guo, Shu-Yu Wang, Lin Du and Qi-Hua Zhao
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引用次数: 0

摘要

金属有机框架中配体上的缺陷和官能团会影响孔隙率和比表面积,进而影响质子迁移率。通过添加芳香族单羧酸调制剂,合成了具有不同缺陷数和官能团的缺陷 UiO-66-Hf 框架。因此,质子的最佳传导率达到了 4.56×10-2 S∙cm-1 ,比原始的 UiO-66-Hf 高出四个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Functional modulators and missing-linker defects realize high proton conductivity in UiO-66-Hf metal–organic frameworks†

Functional modulators and missing-linker defects realize high proton conductivity in UiO-66-Hf metal–organic frameworks†

Defects and functional groups on ligands in metal organic frameworks affect porosity and surface area, which successively impacts proton mobility. Defective UiO-66-Hf frameworks with different defect numbers and functional groups were synthesized by adding aromatic monocarboxylic modulators. Thus, an optimal proton conductivity at 4.56 × 10−2 S cm−1 was achieved, which was four orders of magnitude greater than the original UiO-66-Hf.

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来源期刊
CrystEngComm
CrystEngComm 化学-化学综合
CiteScore
5.50
自引率
9.70%
发文量
747
审稿时长
1.7 months
期刊介绍: Design and understanding of solid-state and crystalline materials
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