In2O3-Ga2O3 合金薄膜的气体传感特性

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-14 DOI:10.1134/s1063785023900844

V. I. Nikolaev, A. V. Almaev, B. O. Kushnarev, A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, R. B. Timashov, M. P. Scheglov, P. N. Butenko, E. V. Chernikov

{"title":"In2O3-Ga2O3 合金薄膜的气体传感特性","authors":"V. I. Nikolaev, A. V. Almaev, B. O. Kushnarev, A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, R. B. Timashov, M. P. Scheglov, P. N. Butenko, E. V. Chernikov","doi":"10.1134/s1063785023900844","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3>The effect of the gaseous medium composition on the electrically conductive properties of In2O3–Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550°C, the In2O3–Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3–Ga2O3 films to gases is proposed.","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films\",\"authors\":\"V. I. Nikolaev, A. V. Almaev, B. O. Kushnarev, A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, R. B. Timashov, M. P. Scheglov, P. N. Butenko, E. V. Chernikov\",\"doi\":\"10.1134/s1063785023900844\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3>The effect of the gaseous medium composition on the electrically conductive properties of In2O3–Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550°C, the In2O3–Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3–Ga2O3 films to gases is proposed.\",\"PeriodicalId\":784,\"journal\":{\"name\":\"Technical Physics Letters\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2024-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1134/s1063785023900844\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063785023900844","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

摘要研究了气体介质成分对通过卤化物气相外延获得的 In2O3-Ga2O3 薄膜导电性能的影响。在 100-550°C 的温度范围内，In2O3-Ga2O3 薄膜对 H2、NH3 具有高灵敏度，并具有连通性和低基底电阻。研究提出了 In2O3-Ga2O3 薄膜对气体敏感的定性机制。

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Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films

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Gas-Sensing Properties of In2O3–Ga2O3 Alloy Films

Abstract

The effect of the gaseous medium composition on the electrically conductive properties of In₂O₃–Ga₂O₃ films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550°C, the In₂O₃–Ga₂O₃ films exhibit high sensitivity to H₂, NH₃ and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In₂O₃–Ga₂O₃ films to gases is proposed.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.