用于 InAlAs-InGaAs 雪崩光电二极管的蘑菇状 Mesa 结构

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-14 DOI:10.1134/s1063785023900819

N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, A. P. Vasyl’ev, S. A. Blokhin, S. I. Troshkov, A. V. Nashchekin, M. A. Bobrov, A. A. Blokhin, K. O. Voropaev, V. E. Bugrov, V. M. Ustinov

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引用次数: 0

摘要

摘要提出并研究了 InAlAs/InGaAs 雪崩光电二极管（APD）的蘑菇网格结构。APD 异质结构是通过分子束外延生长的。制备出的 APD 的敏感区直径约为 30 微米，经 SiN 沉积钝化后，雪崩击穿电压 Vbr 为 70-80 V，在 0.9 Vbr 的外加偏压下，暗电流为 75-200 nA。单模耦合 APD 在 1550 nm 波长下的响应率高于 0.5 A/W。

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Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes

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Mushroom Mesa Structure for InAlAs–InGaAs Avalanche Photodiodes

Abstract

Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes (APD) was proposed and investigated. APD heterostructrures were grown by molecular-beam epitaxy. Fabricated APDs with the sensitive area diameter of about 30 micron were passivated by SiN deposition and demonstrated avalanche breakdown voltage V_br 70–80 V. At the applied bias of 0.9 V_br, the dark current was 75–200 nA. The single-mode coupled APDs demonstrated responsivity at a gain of unity higher than 0.5 A/W at 1550 nm.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.