氮等离子体处理对 InGaN 结构和光学特性的影响

IF 0.8 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Letters Pub Date : 2024-03-14 DOI:10.1134/s106378502390073x

V. O. Gridchin, I. P. Soshnikov, R. R. Reznik, S. D. Komarov, E. V. Pirogov, V. V. Lendyashova, K. P. Kotlyar, N. V. Kryzhanovskaya, G. E. Cirlin

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引用次数: 0

摘要

摘要研究了等离子体辅助分子束外延生长过程中的冷却条件对 InGaN 纳米结构的结构和光学特性的影响。结果表明，在不使用氮等离子体的情况下冷却样品有助于抑制 InGaN 纳米结构中的相分离。这些纳米结构的光致发光综合强度增加了 2 倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN

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Effect of Nitrogen Plasma Treatment on the Structural and Optical Properties of InGaN

Abstract

The effect of cooling conditions in the plasma-assisted molecular-beam epitaxy growth on the structural and optical properties of InGaN nanostructures is studied. It is shown that cooling of the samples without nitrogen plasma contributes to the suppression of phase separation in InGaN nanostructures. The integrated intensity of photoluminescence from these nanostructures increased by a factor of 2.

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来源期刊

Technical Physics Letters 物理-物理：应用

CiteScore

1.50

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.