{"title":"用于非线性光学 (NLO) 应用的苯胺-4-磺酸的合成、晶体生长、光学、热学、压电和激光损伤阈值表征","authors":"R. Maga, S. R. Abinaya Roshini, D. Jayalakshmi","doi":"10.1007/s13538-024-01480-4","DOIUrl":null,"url":null,"abstract":"<p>The organic single crystal of aniline-4-sulphonic acid (A4SA) was synthesized and grown by slow evaporation solution technique (SEST) using distilled water as a solvent. The lattice parameters of the grown crystal were confirmed by single-crystal X-ray diffraction analysis. The X-ray diffraction exposes that the A4SA crystal belongs to an orthorhombic system with space group Pca2<sub>1</sub>. Functional groups of A4SA crystal were confirmed by Fourier transform infrared (FTIR) and FT-Raman spectrum analyses. The optical quality of the grown crystal was identified by the UV-Visible NIR spectrum analysis. The grown crystal has good optical transmittance in the range of 300–900 nm. The photoconductivity analysis was carried out to calculate the photo and dark current values. Photoconductivity study indicates that A4SA crystal shows a negative photoconductivity nature. Intermolecular interactions of A4SA are executed by the Hirshfeld surface analysis. The chemical etching was investigated to calculate the etch pit density. Photoluminescence analysis for grown crystals is obtained. Thermogravimetric, differential thermogravimetric analysis and differential scanning calorimetry (TG, DTA, DSC) measurements investigate the thermal stability of a grown crystal. Vickers microhardness analysis was performed to study the mechanical properties of the material. The Nd:YAG laser, with a wavelength of 1064 nm, was used to examine the LDT analysis. It shows a good LDT value of 5.02 GW/cm<sup>2</sup>. The third-order non-linear susceptibility was measured and analysed by Z-scan technique using (He–Ne) laser of wavelength 632.8 nm.</p>","PeriodicalId":499,"journal":{"name":"Brazilian Journal of Physics","volume":null,"pages":null},"PeriodicalIF":1.5000,"publicationDate":"2024-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis, Crystal Growth, Optical, Thermal, Piezoelectric and Laser Damage Threshold Characterization of Aniline-4-Sulphonic Acid for Nonlinear Optical (NLO) Applications\",\"authors\":\"R. Maga, S. R. Abinaya Roshini, D. Jayalakshmi\",\"doi\":\"10.1007/s13538-024-01480-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The organic single crystal of aniline-4-sulphonic acid (A4SA) was synthesized and grown by slow evaporation solution technique (SEST) using distilled water as a solvent. The lattice parameters of the grown crystal were confirmed by single-crystal X-ray diffraction analysis. The X-ray diffraction exposes that the A4SA crystal belongs to an orthorhombic system with space group Pca2<sub>1</sub>. Functional groups of A4SA crystal were confirmed by Fourier transform infrared (FTIR) and FT-Raman spectrum analyses. The optical quality of the grown crystal was identified by the UV-Visible NIR spectrum analysis. The grown crystal has good optical transmittance in the range of 300–900 nm. The photoconductivity analysis was carried out to calculate the photo and dark current values. Photoconductivity study indicates that A4SA crystal shows a negative photoconductivity nature. Intermolecular interactions of A4SA are executed by the Hirshfeld surface analysis. The chemical etching was investigated to calculate the etch pit density. Photoluminescence analysis for grown crystals is obtained. Thermogravimetric, differential thermogravimetric analysis and differential scanning calorimetry (TG, DTA, DSC) measurements investigate the thermal stability of a grown crystal. Vickers microhardness analysis was performed to study the mechanical properties of the material. The Nd:YAG laser, with a wavelength of 1064 nm, was used to examine the LDT analysis. It shows a good LDT value of 5.02 GW/cm<sup>2</sup>. The third-order non-linear susceptibility was measured and analysed by Z-scan technique using (He–Ne) laser of wavelength 632.8 nm.</p>\",\"PeriodicalId\":499,\"journal\":{\"name\":\"Brazilian Journal of Physics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-05-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Brazilian Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1007/s13538-024-01480-4\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Brazilian Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1007/s13538-024-01480-4","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
Synthesis, Crystal Growth, Optical, Thermal, Piezoelectric and Laser Damage Threshold Characterization of Aniline-4-Sulphonic Acid for Nonlinear Optical (NLO) Applications
The organic single crystal of aniline-4-sulphonic acid (A4SA) was synthesized and grown by slow evaporation solution technique (SEST) using distilled water as a solvent. The lattice parameters of the grown crystal were confirmed by single-crystal X-ray diffraction analysis. The X-ray diffraction exposes that the A4SA crystal belongs to an orthorhombic system with space group Pca21. Functional groups of A4SA crystal were confirmed by Fourier transform infrared (FTIR) and FT-Raman spectrum analyses. The optical quality of the grown crystal was identified by the UV-Visible NIR spectrum analysis. The grown crystal has good optical transmittance in the range of 300–900 nm. The photoconductivity analysis was carried out to calculate the photo and dark current values. Photoconductivity study indicates that A4SA crystal shows a negative photoconductivity nature. Intermolecular interactions of A4SA are executed by the Hirshfeld surface analysis. The chemical etching was investigated to calculate the etch pit density. Photoluminescence analysis for grown crystals is obtained. Thermogravimetric, differential thermogravimetric analysis and differential scanning calorimetry (TG, DTA, DSC) measurements investigate the thermal stability of a grown crystal. Vickers microhardness analysis was performed to study the mechanical properties of the material. The Nd:YAG laser, with a wavelength of 1064 nm, was used to examine the LDT analysis. It shows a good LDT value of 5.02 GW/cm2. The third-order non-linear susceptibility was measured and analysed by Z-scan technique using (He–Ne) laser of wavelength 632.8 nm.
期刊介绍:
The Brazilian Journal of Physics is a peer-reviewed international journal published by the Brazilian Physical Society (SBF). The journal publishes new and original research results from all areas of physics, obtained in Brazil and from anywhere else in the world. Contents include theoretical, practical and experimental papers as well as high-quality review papers. Submissions should follow the generally accepted structure for journal articles with basic elements: title, abstract, introduction, results, conclusions, and references.