A. V. Malevskaya, F. Yu. Soldatenkov, R. V. Levin, N. S. Potapovich
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引用次数: 0
摘要
摘要 研究了 Pd/Ge/Au 接触系统形成机制对 n 型导电 GaAs 层比接触电阻率的影响。研究了样品在层蒸发前的表面处理方法以及在 H2、N2 和 Ar 大气中的热退火制度对接触系统参数的影响。在降低退火温度 190°C 时,特定接触电阻率值 (2-3) × 10-6 Ohm cm2 被存档。
Forming Regimes of Pd/Ge/Au Contact System to n-GaAs Influence on Its Electric Parameters
Abstract
The investigations of Pd/Ge/Au contact system forming regimes influence on the specific contact resistivity to n-type conductivity GaAs layer were carried out. The method of samples surface treatment before the layers evaporation and thermal annealing regimes in H2, N2, and Ar atmosphere influence on contact system parameters was investigated. The specific contact resistivity value (2–3) × 10–6 Ohm cm2 at the reduced annealing temperature 190°C was archived..
期刊介绍:
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.