{"title":"基于 InAsSb 的 nBn 光电二极管光谱响应研究","authors":"V. S. Kovshov","doi":"10.1134/s1064226923140115","DOIUrl":null,"url":null,"abstract":"<h3 data-test=\"abstract-sub-heading\">Abstract</h3><p>The classical structure of <i>n</i>B<i>n</i> photodiode based on InAsSb for the detection in the mid-wave infrared (MWIR) range is considered. The optical absorption in the heterostructure at any position is calculated with allowance for the features of absorption of the InAsSb active layer, in particular, the Burstein–Moss effect and the Urbach rule. The quantum efficiency and spectral response of the sensitivity are calculated taking into account multiple reflections at the interfaces of the heterostructure and the features of free-carrier absorption in the GaSb substrate. The optimal thickness of the active layer of the <i>n</i>B<i>n</i> photodiode is determined for various lifetimes of minority carriers. Relatively high BLIP detectivity of the FPA is shown.</p>","PeriodicalId":50229,"journal":{"name":"Journal of Communications Technology and Electronics","volume":null,"pages":null},"PeriodicalIF":0.4000,"publicationDate":"2024-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of the Spectral Response of nBn Photodiodes Based on InAsSb\",\"authors\":\"V. S. Kovshov\",\"doi\":\"10.1134/s1064226923140115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<h3 data-test=\\\"abstract-sub-heading\\\">Abstract</h3><p>The classical structure of <i>n</i>B<i>n</i> photodiode based on InAsSb for the detection in the mid-wave infrared (MWIR) range is considered. The optical absorption in the heterostructure at any position is calculated with allowance for the features of absorption of the InAsSb active layer, in particular, the Burstein–Moss effect and the Urbach rule. The quantum efficiency and spectral response of the sensitivity are calculated taking into account multiple reflections at the interfaces of the heterostructure and the features of free-carrier absorption in the GaSb substrate. The optimal thickness of the active layer of the <i>n</i>B<i>n</i> photodiode is determined for various lifetimes of minority carriers. Relatively high BLIP detectivity of the FPA is shown.</p>\",\"PeriodicalId\":50229,\"journal\":{\"name\":\"Journal of Communications Technology and Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.4000,\"publicationDate\":\"2024-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Communications Technology and Electronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://doi.org/10.1134/s1064226923140115\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Communications Technology and Electronics","FirstCategoryId":"94","ListUrlMain":"https://doi.org/10.1134/s1064226923140115","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigation of the Spectral Response of nBn Photodiodes Based on InAsSb
Abstract
The classical structure of nBn photodiode based on InAsSb for the detection in the mid-wave infrared (MWIR) range is considered. The optical absorption in the heterostructure at any position is calculated with allowance for the features of absorption of the InAsSb active layer, in particular, the Burstein–Moss effect and the Urbach rule. The quantum efficiency and spectral response of the sensitivity are calculated taking into account multiple reflections at the interfaces of the heterostructure and the features of free-carrier absorption in the GaSb substrate. The optimal thickness of the active layer of the nBn photodiode is determined for various lifetimes of minority carriers. Relatively high BLIP detectivity of the FPA is shown.
期刊介绍：
Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
