基于 InAsSb 的 p-n 光电二极管中电流的温度依赖性

IF 0.4 4区计算机科学 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Communications Technology and Electronics Pub Date : 2024-03-07 DOI:10.1134/s106422692314019x

N. I. Iakovleva, V. S. Kovshov

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引用次数: 0

摘要

摘要考虑到 InAs1 - xSbx 合金的材料特性，计算了 InAsSb 基 p-n 光电二极管中探测中波红外（MWIR）区域辐射的暗电流的温度依赖性。在 T = 150 K 时，所需的信噪比为 ∼103，这证实了在 InAs1 - xSbx 光电二极管中实现高光电参数及其在高温应用中使用的可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Temperature Dependence of Current in a InAsSb-Based p–n Photodiode

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Temperature Dependence of Current in a InAsSb-Based p–n Photodiode

Abstract

The temperature dependence of the dark current in InAsSb-based p–n photodiodes detecting radiation in the medium-wave infrared (MWIR) region have been calculated, taking into account material characteristics of InAs_1 – xSb_x alloy. The desired signal-to-noise ratio is ∼10³ at T = 150 K, which confirms the possibility of achieving high photovoltaic parameters in InAs_1 – xSb_x photodiodes and their usage in high-temperature applications.

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来源期刊

Journal of Communications Technology and Electronics 工程技术-电信学

CiteScore

1.00

自引率

20.00%

发文量

170

审稿时长

10.5 months

期刊介绍： Journal of Communications Technology and Electronics is a journal that publishes articles on a broad spectrum of theoretical, fundamental, and applied issues of radio engineering, communication, and electron physics. It publishes original articles from the leading scientific and research centers. The journal covers all essential branches of electromagnetics, wave propagation theory, signal processing, transmission lines, telecommunications, physics of semiconductors, and physical processes in electron devices, as well as applications in biology, medicine, microelectronics, nanoelectronics, electron and ion emission, etc.