系统研究用于制备高质量 TEM 样品的 FIB 引起的损伤

IF 2.1 3区工程技术 Q2 MICROSCOPY

Ultramicroscopy Pub Date : 2024-04-26 DOI:10.1016/j.ultramic.2024.113980

Jun Uzuhashi, Tadakatsu Ohkubo

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引用次数: 0

摘要

如今，带有扫描电子显微镜（SEM）系统的聚焦镓离子束（FIB）已被广泛用于制备薄片样品，以便进行透射电子显微镜（TEM）或扫描电子显微镜（STEM）观察。要进行高质量的 (S)TEM 分析，就必须为可重现的高质量样品制备过程制定可靠的策略。在这项工作中，对硅 (Si)、氮化镓 (GaN)、磷化铟 (InP) 和砷化镓 (GaAs) 半导体进行了实验和停止以及物质中离子范围 (SRIM) 模拟，研究了 Ga+ 射束引入的 FIB 损伤。研究发现，通过将损伤定义为 "非晶化 "和 "晶体变形"，对 FIB 引起的损伤进行的实验研究与 SRIM 模拟结果非常吻合。本文所展示的对 FIB 损伤的系统性评估，对可靠的 (S)TEM 样品制备具有不可或缺的指导意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Systematic study of FIB-induced damage for the high-quality TEM sample preparation

Nowadays, a focused Ga ion beam (FIB) with a scanning electron microscopy (SEM) system has been widely used to prepare the thin-foil sample for transmission electron microscopy (TEM) or scanning TEM (STEM) observation. An establishment of a solid strategy for a reproducible high-quality sample preparation process is essential to carry out high-quality (S)TEM analysis. In this work, the FIB damages introduced by Ga⁺ beam were investigated both experimentally and stopping and range of ions in matter (SRIM) simulation for silicon (Si), gallium nitride (GaN), indium phosphide (InP), and gallium arsenide (GaAs) semiconductors. It has been revealed that experimental investigations of the FIB-induced damage are in good agreement with SRIM simulation by defining the damage as not only “amorphization” but also “crystal distortion”. The systematic evaluation of FIB damages shown in this paper should be indispensable guidance for reliable (S)TEM sample preparation.

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来源期刊

Ultramicroscopy 工程技术-显微镜技术

CiteScore

4.60

自引率

13.60%

发文量

117

审稿时长

5.3 months

期刊介绍： Ultramicroscopy is an established journal that provides a forum for the publication of original research papers, invited reviews and rapid communications. The scope of Ultramicroscopy is to describe advances in instrumentation, methods and theory related to all modes of microscopical imaging, diffraction and spectroscopy in the life and physical sciences.